SISA10DN-T1-GE3

SISA10DN-T1-GE3
Mfr. #:
SISA10DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 30A 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISA10DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISA10DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SISA10DN-GE3
Montageart
SMD/SMT
Handelsname
TrenchFET
Paket-Koffer
PowerPAKR 1212-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR 1212-8
Aufbau
Dual
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
39W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
2425pF @ 15V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
30A (Tc)
Rds-On-Max-Id-Vgs
3.7 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
Gate-Lade-Qg-Vgs
51nC @ 10V
Pd-Verlustleistung
39 W
Maximale-Betriebstemperatur
+ 150 C
Vgs-Gate-Source-Spannung
2.2 V
ID-Dauer-Drain-Strom
30 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
3.7 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
15.4 nC
Kanal-Modus
Erweiterung
Tags
SISA10DN-T, SISA10, SISA1, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISA10DN-T1-GE3
DISTI # V72:2272_09216117
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212
RoHS: Compliant
482
  • 250:$0.5832
  • 100:$0.5846
  • 25:$0.7175
  • 10:$0.7201
  • 1:$0.8320
SISA10DN-T1-GE3
DISTI # SISA10DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
165In Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
SISA10DN-T1-GE3
DISTI # SISA10DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
165In Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
SISA10DN-T1-GE3
DISTI # SISA10DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 30A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.4620
SISA10DN-T1-GE3
DISTI # 25789965
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212
RoHS: Compliant
482
  • 250:$0.5832
  • 100:$0.5846
  • 25:$0.7175
  • 16:$0.7201
SISA10DN-T1-GE3
DISTI # SISA10DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R (Alt: SISA10DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SISA10DN-T1-GE3
    DISTI # SISA10DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA10DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.4359
    • 6000:$0.4229
    • 12000:$0.4059
    • 18000:$0.3949
    • 30000:$0.3839
    SISA10DN-T1-GE3
    DISTI # 68W7090
    Vishay IntertechnologiesMOSFET, N CH, 30V, 30A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:39W, RoHS Compliant: Yes0
    • 1:$0.4440
    • 3000:$0.4410
    • 6000:$0.4200
    • 12000:$0.3720
    SISA10DN-T1-GE3
    DISTI # 68W7089
    Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 30A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1V , RoHS Compliant: Yes0
    • 1:$1.0500
    • 25:$0.8650
    • 50:$0.7640
    • 100:$0.6630
    • 250:$0.6170
    • 500:$0.5710
    • 1000:$0.5010
    SISA10DN-T1-GE3
    DISTI # 70243891
    Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,30A,3.7mohm @ 10V,PowerPAK 1212-8
    RoHS: Compliant
    0
    • 3000:$0.4150
    SISA10DN-T1-GE3
    DISTI # 78-SISA10DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    294
    • 1:$1.0500
    • 10:$0.8650
    • 100:$0.6630
    • 500:$0.5710
    • 1000:$0.5400
    • 3000:$0.5000
    SISA10DN-T1-GE3
    DISTI # 7879409P
    Vishay IntertechnologiesMOSFET N-CH 30V 25A POWERPAK 1212-8, RL1050
    • 100:£0.5220
    SISA10DN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas -
    • 3000:$0.4250
    • 6000:$0.4020
    • 12000:$0.3890
    • 24000:$0.3830
    SISA10DN-T1-GE3
    DISTI # C1S803601946001
    Vishay IntertechnologiesMOSFETs482
    • 100:$0.5809
    • 50:$0.6965
    • 25:$0.7146
    • 10:$0.7177
    Bild Teil # Beschreibung
    SISA10DN-T1-GE3

    Mfr.#: SISA10DN-T1-GE3

    OMO.#: OMO-SISA10DN-T1-GE3

    MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    SISA10DN

    Mfr.#: SISA10DN

    OMO.#: OMO-SISA10DN-1190

    Neu und Original
    SISA10DN-T1

    Mfr.#: SISA10DN-T1

    OMO.#: OMO-SISA10DN-T1-1190

    Neu und Original
    SISA10DN-T1-E3

    Mfr.#: SISA10DN-T1-E3

    OMO.#: OMO-SISA10DN-T1-E3-1190

    Neu und Original
    SISA10DN-T1-GE3

    Mfr.#: SISA10DN-T1-GE3

    OMO.#: OMO-SISA10DN-T1-GE3-VISHAY

    MOSFET N-CH 30V 30A 1212-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von SISA10DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,28 $
    0,28 $
    10
    0,26 $
    2,62 $
    100
    0,25 $
    24,79 $
    500
    0,23 $
    117,05 $
    1000
    0,22 $
    220,40 $
    Beginnen mit
    Top