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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFP8N20 | Harris Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 2366 |
|
| RFP8N20L | Harris Semiconductor | MOSFET Transistor, N-Channel, TO-220AB | 8 |
|
| RFP8N20L | HARTING Technology Group | RoHS: Not Compliant | Europe - 1150 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFP8P05 OMO.#: OMO-RFP8P05 |
MOSFET TO-220AB P-Ch Power |
|
Mfr.#: RFP8N18 OMO.#: OMO-RFP8N18-1190 |
Neu und Original |
|
|
Mfr.#: RFP8N20 OMO.#: OMO-RFP8N20-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
|
Mfr.#: RFP8N20L OMO.#: OMO-RFP8N20L-1190 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
Mfr.#: RFP8P05 OMO.#: OMO-RFP8P05-ON-SEMICONDUCTOR |
MOSFET P-CH 50V 8A TO-220AB |
|
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Mfr.#: RFP8P06 OMO.#: OMO-RFP8P06-1190 |
Neu und Original |
|
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Mfr.#: RFP8P06E OMO.#: OMO-RFP8P06E-1190 |
Neu und Original |
|
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Mfr.#: RFP8P06LE OMO.#: OMO-RFP8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
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Mfr.#: RFP8P08 OMO.#: OMO-RFP8P08-1190 |
Neu und Original |
|
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Mfr.#: RFP8P10 OMO.#: OMO-RFP8P10-1190 |
- Bulk (Alt: RFP8P10) |