FDMS86180

FDMS86180
Mfr. #:
FDMS86180
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V/20V N-Channel PTNG MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS86180 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMS86180 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
151 A
Rds On - Drain-Source-Widerstand:
2.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
84 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
138 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
FDMS86180
Transistortyp:
1 N-Channel
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
144 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
24 ns
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86180
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 151A, 3.2mΩ
***ure Electronics
N-Channel 100 V 3.2 mOhmShielded Gate PowerTrench Mosfet - Power56
***ark
100V/20V N-CHANNEL PTNG MOSFET
***et Europe
N-Channel Shielded Gate PowerTrench MOSFET 100V Drain to Source Voltage 151A Continuous Drain Current 138W Power Dissipation Surface Mount 8-Pin PQFN T/R
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMS86180
DISTI # V36:1790_17091597
ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET0
    FDMS86180
    DISTI # FDMS86180TR-ND
    ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 3000:$1.6076
    FDMS86180
    DISTI # FDMS86180CT-ND
    ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$1.7386
    • 500:$2.0615
    • 100:$2.4217
    • 10:$2.9560
    • 1:$3.2900
    FDMS86180
    DISTI # FDMS86180DKR-ND
    ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$1.7386
    • 500:$2.0615
    • 100:$2.4217
    • 10:$2.9560
    • 1:$3.2900
    FDMS86180
    DISTI # FDMS86180
    ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET 100V Drain to Source Voltage 151A Continuous Drain Current 138W Power Dissipation Surface Mount 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86180)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 12000:$1.7900
    • 18000:$1.7900
    • 30000:$1.7900
    • 3000:$1.8900
    • 6000:$1.8900
    FDMS86180
    DISTI # 18AC7314
    ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 56,Transistor Polarity:N Channel,Continuous Drain Current Id:151A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes0
    • 1000:$1.5900
    • 500:$1.8800
    • 250:$2.1000
    • 100:$2.2100
    • 50:$2.3300
    • 25:$2.4400
    • 10:$2.5600
    • 1:$3.0100
    FDMS86180
    DISTI # 24AC8554
    ON SemiconductorFET 100V 3.2 MOHM PQFN56 / REEL0
    • 30000:$1.3900
    • 18000:$1.4100
    • 12000:$1.4700
    • 6000:$1.5800
    • 3000:$1.6900
    • 1:$1.7700
    FDMS86180
    DISTI # 512-FDMS86180
    ON SemiconductorMOSFET 100V/20V N-Channel PTNG MOSFET
    RoHS: Compliant
    0
    • 1:$3.0300
    • 10:$2.5800
    • 100:$2.2300
    • 250:$2.1200
    • 500:$1.9000
    • 1000:$1.6000
    • 3000:$1.5200
    FDMS86180
    DISTI # 2762548
    ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 56
    RoHS: Compliant
    0
    • 3000:$2.3400
    • 1000:$2.4600
    • 500:$2.9200
    • 250:$3.2600
    • 100:$3.4300
    • 10:$3.9700
    • 1:$4.6700
    FDMS86180
    DISTI # 2762548
    ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 560
    • 500:£1.4800
    • 250:£1.6500
    • 100:£1.7300
    • 10:£2.0100
    • 1:£2.6600
    Bild Teil # Beschreibung
    ISO7421D

    Mfr.#: ISO7421D

    OMO.#: OMO-ISO7421D

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    FDY1002PZ

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    MOSFET -20V DUAL P-CHAN POWERTRENCH
    TPS76350DBVR

    Mfr.#: TPS76350DBVR

    OMO.#: OMO-TPS76350DBVR

    LDO Voltage Regulators 5.0V 150mA LDO
    STCMB1

    Mfr.#: STCMB1

    OMO.#: OMO-STCMB1

    Power Factor Correction - PFC TM PFC with X-cap discharge and LLC resonant combo controller
    74404086471

    Mfr.#: 74404086471

    OMO.#: OMO-74404086471

    Fixed Inductors WE-LQS 8065 470uH 20% 0.65 1200mOhm
    3522-2

    Mfr.#: 3522-2

    OMO.#: OMO-3522-2

    Fuse Holder AUTO FUSEHOLDER .025
    STCMB1

    Mfr.#: STCMB1

    OMO.#: OMO-STCMB1-STMICROELECTRONICS

    IC TM PFC RES CTLR 20SOIC
    STEF01FTR

    Mfr.#: STEF01FTR

    OMO.#: OMO-STEF01FTR-STMICROELECTRONICS

    IC ELECTRONIC FUSE
    1211

    Mfr.#: 1211

    OMO.#: OMO-1211-KEYSTONE-ELECTRONICS

    Terminals TERMINAL .110X.032
    TPS76350DBVR

    Mfr.#: TPS76350DBVR

    OMO.#: OMO-TPS76350DBVR-TEXAS-INSTRUMENTS

    LDO Voltage Regulators 5.0V 150mA LDO
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von FDMS86180 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,03 $
    3,03 $
    10
    2,58 $
    25,80 $
    100
    2,23 $
    223,00 $
    250
    2,12 $
    530,00 $
    500
    1,90 $
    950,00 $
    1000
    1,60 $
    1 600,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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