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2SB1215T-H

2SB1215T-H
Mfr. #:
2SB1215T-H
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT BIP PNP 3A 100V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SB1215T-H Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Polarität des Transistors:
PNP
Kollektor- Emitterspannung VCEO Max:
100 V
Emitter- Basisspannung VEBO:
- 6 V
Serie:
2SB1215
Verpackung:
Schüttgut
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
3 A
DC-Kollektor/Basisverstärkung hfe Min:
70
Pd - Verlustleistung:
1 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.139332 oz
Tags
2SB1215T, 2SB1215, 2SB121, 2SB12, 2SB1, 2SB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP
***ical
Trans GP BJT PNP 100V 3A 1000mW 3-Pin(3+Tab) TP Bag
***emi
Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP
***ical
Trans GP BJT PNP 100V 3A 1000mW 3-Pin(3+Tab) TP Bag
***emi
Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP
***ical
Trans GP BJT PNP 100V 3A 1000mW 3-Pin(3+Tab) TP Bag
***nell
TRANSISTOR, BIPOLAR, PNP, 100V, 3A/TO251;
***ark
TRANSISTOR, BIPOLAR, PNP, 100V, 3A/TO251; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251
***emi
Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single
***ical
Trans GP BJT PNP 100V 4A 1000mW 3-Pin(3+Tab) TP Bag
***ark
TRANSISTOR, PNP, 100V, 4A, 20W, TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2SB1215T-H
DISTI # 2SB1215T-H-ND		ON SemiconductorTRANS PNP 100V 3A TP
RoHS: Compliant
Min Qty: 1000
Container: Bulk		Temporarily Out of Stock
  • 1000:$0.3746
2SB1215T-H
DISTI # 2SB1215T-H		ON SemiconductorBIP PNP 3A 100V - Bulk (Alt: 2SB1215T-H)
RoHS: Compliant
Min Qty: 1500
Container: Bulk		Americas - 0
  • 1500:$0.2909
  • 2500:$0.2889
  • 4000:$0.2849
  • 7500:$0.2819
  • 15000:$0.2749
2SB1215T-H
DISTI # 863-2SB1215T-H		ON SemiconductorBipolar Transistors - BJT BIP PNP 3A 100V
RoHS: Compliant		1165
  • 1:$0.8400
  • 10:$0.6920
  • 100:$0.4460
  • 1000:$0.3570
  • 2500:$0.3020
  • 10000:$0.2900
  • 25000:$0.2790
2SB1215T-E
DISTI # 863-2SB1215T-E		ON SemiconductorBipolar Transistors - BJT BIP PNP 3A 100V
RoHS: Compliant		1490
  • 1:$0.8400
  • 10:$0.6920
  • 100:$0.4460
  • 1000:$0.3570
  • 2500:$0.3020
  • 10000:$0.2900
  • 25000:$0.2790
Bild Teil # Beschreibung
860160372004

Mfr.#: 860160372004

OMO.#: OMO-860160372004

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Mfr.#: DF3EA-6P-2V(21)

OMO.#: OMO-DF3EA-6P-2V-21--HIROSE

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860160372006

Mfr.#: 860160372006

OMO.#: OMO-860160372006-WURTH-ELECTRONICS

 CAP 39 UF 20% 16 V
BGM111A256V21

Mfr.#: BGM111A256V21

OMO.#: OMO-BGM111A256V21-SILICON-LABS

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OMO.#: OMO-NCP177AMX330TCG-ON-SEMICONDUCTOR

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 RESISTOR, WIREWOUND, 15OHM, 5%, AXIAL
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von 2SB1215T-H dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,84 $
0,84 $
10
0,69 $
6,92 $
100
0,45 $
44,60 $
1000
0,36 $
357,00 $
2500
0,30 $
755,00 $
10000
0,29 $
2 900,00 $
25000
0,28 $
6 975,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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