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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI3460DV-T1-GE3 DISTI # SI3460DV-T1-GE3-ND | Vishay Siliconix | MOSFET N-CH 20V 5.1A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI3460DV-T1-GE3 DISTI # 781-SI3460DV-GE3 | Vishay Intertechnologies | MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V RoHS: Compliant | 0 | |
| SI3460DV-T1-GE3 | Vishay Intertechnologies | 3000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SI3460DV-T1-GE3 OMO.#: OMO-SI3460DV-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3 |
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Mfr.#: SI3460DV-T1-GE3 OMO.#: OMO-SI3460DV-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V |
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Mfr.#: SI3460DDV OMO.#: OMO-SI3460DDV-1190 |
Neu und Original |
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Mfr.#: SI3460DDV-T1-E3 OMO.#: OMO-SI3460DDV-T1-E3-1190 |
Neu und Original |
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Mfr.#: SI3460DDV-T1-GE3 OMO.#: OMO-SI3460DDV-T1-GE3-VISHAY |
MOSFET N-CH 20V 7.9A 6-TSOP |
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Mfr.#: SI3460DV-T1-E3 OMO.#: OMO-SI3460DV-T1-E3-VISHAY |
MOSFET N-CH 20V 5.1A 6TSOP |
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Mfr.#: SI3460DV-T1-E3 (DC200801 |
Neu und Original |
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Mfr.#: SI3460DV-T3-E3 OMO.#: OMO-SI3460DV-T3-E3-1190 |
Neu und Original |
|
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Mfr.#: SI3460DV-TI OMO.#: OMO-SI3460DV-TI-1190 |
Neu und Original |
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Mfr.#: SI3460DVT1E3 OMO.#: OMO-SI3460DVT1E3-1190 |
Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
