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STGY50NC60WD

STGY50NC60WD
Mfr. #:
STGY50NC60WD
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors 600V 65A N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGY50NC60WD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGY50NC60WD Mehr Informationen STGY50NC60WD Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
Max247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
STGY50NC60WD
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
110 A
Höhe:
20.3 mm
Länge:
15.9 mm
Breite:
5.3 mm
Marke:
STMicroelectronics
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
IGBTs
Tags
STGY5, STGY, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 110A 278000mW 3-Pin(3+Tab) Max247 Tube
*** Source Electronics
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT | IGBT 600V 110A 278W MAX247
***ure Electronics
STGY50NC60WD Series 600 V 50 A Ultra Fast IGBT Through Hole - MAX-247
***nell
IGBT, N 600V 19A MAX247; DC Collector Current: 110A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: MAX-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 65A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 278W; Pulsed Current Icm: 250A; Rise Time: 17ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ark
Igbt Single Transistor, 80 A, 2.5 V, 260 W, 600 V, Max-247, 3
***ical
Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube
***nell
IGBT, 600V, 40A, TO-247 MAX; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: MAX-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic @ Vce Sat: 40A; Current Ic Continuous a Max: 80A; Current Temperature: 25°C; Fall Time tf: 45ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 260W; Power Dissipation Ptot Max: 260W; Pulsed Current Icm: 200A; Rise Time: 19ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ure Electronics
Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL
***ical
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel
***icroelectronics
40 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications
***p One Stop
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes
***p One Stop
Trans IGBT Chip N-CH 600V 96A 330000mW Automotive 3-Pin(3+Tab) TO-247AD Tube
***ure Electronics
AUIRGP4063D Series 600 V 96 A N-Channel IGBT Flange Mount - TO-247AD
***ineon SCT
600V co-pack Automotive Trench IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ineon
Benefits: Low Vce(ON); Optimized for motor drive applications; 5us SCSOA at 25C; 175C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: HVAC Compressor; Oil Pump; PTC Heater
***ark
Igbt, Aec-Q101, 600V, 100A, 330W, To247Ad; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:330W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247Ad; No. Of Rohs Compliant: Yes |Infineon AUIRGP4063D-E
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
STGY50NC60WD
DISTI # V36:1790_06560841		STMicroelectronicsTrans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) Max247 Tube
RoHS: Compliant		0
    STGY50NC60WD
    DISTI # 497-7489-5-ND    		STMicroelectronicsIGBT 600V 110A 278W MAX247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		600In Stock
    • 510:$9.5917
    • 120:$10.7824
    • 30:$12.2377
    • 10:$12.7670
    • 1:$13.8900
    STGY50NC60WD
    DISTI # STGY50NC60WD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) Max247 - Rail/Tube (Alt: STGY50NC60WD)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$7.9900
    • 3600:$8.1900
    • 2400:$8.4900
    • 1200:$8.9900
    • 600:$9.3900
    STGY50NC60WD
    DISTI # STGY50NC60WD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) Max247 (Alt: STGY50NC60WD)
    RoHS: Compliant
    Min Qty: 600    		Asia - 0
      STGY50NC60WD
      DISTI # 57P1010      		STMicroelectronicsPTD HIGH VOLTAGE0
      • 500:$8.1900
      • 250:$8.4500
      • 100:$9.6400
      • 50:$10.2100
      • 25:$11.3400
      • 10:$11.6600
      • 1:$12.4800
      STGY50NC60WD
      DISTI # 511-STGY50NC60WD      		STMicroelectronicsIGBT Transistors 600V 65A N-Channel
      RoHS: Compliant      		874
      • 1:$13.2300
      • 10:$12.1600
      • 25:$11.6600
      • 100:$10.2700
      • 250:$9.7700
      • 500:$9.1400
      STGY50NC60WD
      DISTI # 8110903P      		STMicroelectronicsSTMICROELECTRONICSSTGY50NC60WD, TU1814
      • 10:£10.4200
      STGY50NC60WD
      DISTI # 1542234      		STMicroelectronicsIGBT, N 600V 19A MAX247
      RoHS: Compliant      		0
      • 1000:$12.8900
      • 500:$14.0500
      • 250:$15.0200
      • 100:$15.7900
      • 25:$17.9300
      • 10:$18.7000
      • 1:$20.3400
      STGY50NC60WDSTMicroelectronicsInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
      RoHS: Compliant      		Europe - 90
        Bild Teil # Beschreibung
        SCS212AMC

        Mfr.#: SCS212AMC

        OMO.#: OMO-SCS212AMC

        		 Schottky Diodes & Rectifiers SiC, SBD 650V 12A TO-220FM
        GBPC3508W-E4/51

        Mfr.#: GBPC3508W-E4/51

        OMO.#: OMO-GBPC3508W-E4-51

        		 Bridge Rectifiers 35 Amp 800 Volt
        IKW30N60DTPXKSA1

        Mfr.#: IKW30N60DTPXKSA1

        OMO.#: OMO-IKW30N60DTPXKSA1

        		 IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
        IPW60R070P6

        Mfr.#: IPW60R070P6

        OMO.#: OMO-IPW60R070P6

        		 MOSFET HIGH POWER PRICE/PERFORM
        FCH47N60NF

        Mfr.#: FCH47N60NF

        OMO.#: OMO-FCH47N60NF

        		 MOSFET 600V N-Chan MOSFET FRFET, SupreMOS
        24329

        Mfr.#: 24329

        OMO.#: OMO-24329

        		 Standoffs & Spacers 6.0 HEX 20.0mm BRS
        IPW60R070P6

        Mfr.#: IPW60R070P6

        OMO.#: OMO-IPW60R070P6-1190

        		 MOSFET HIGH POWER PRICE/PERFORM
        IKW30N60DTPXKSA1

        Mfr.#: IKW30N60DTPXKSA1

        OMO.#: OMO-IKW30N60DTPXKSA1-INFINEON-TECHNOLOGIES

        		 IGBT 600V 53A TO247-3
        DT043BTFT

        Mfr.#: DT043BTFT

        OMO.#: OMO-DT043BTFT-DISPLAYTECH

        		 LCD Displays TFT Displays & Accessories 4.3" TFT 480X272 TRANSM
        FCH47N60NF

        Mfr.#: FCH47N60NF

        OMO.#: OMO-FCH47N60NF-ON-SEMICONDUCTOR

        		 MOSFET N-CH 600V 45.8A TO-247
        Verfügbarkeit
        Aktie:
        724
        Auf Bestellung:
        2707
        Menge eingeben:
        Der aktuelle Preis von STGY50NC60WD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        13,23 $
        13,23 $
        10
        12,16 $
        121,60 $
        25
        11,66 $
        291,50 $
        100
        10,27 $
        1 027,00 $
        250
        9,77 $
        2 442,50 $
        500
        9,14 $
        4 570,00 $
        1000
        8,38 $
        8 380,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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