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IPW60R055CFD7XKSA1

IPW60R055CFD7XKSA1
Mfr. #:
IPW60R055CFD7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW60R055CFD7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R055CFD7XKSA1 Datasheet
ECAD Model:
Mehr Informationen:
IPW60R055CFD7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
38 A
Rds On - Drain-Source-Widerstand:
55 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
79 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
178 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
CoolMOS CFD7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
98 ns
Typische Einschaltverzögerungszeit:
26 ns
Teil # Aliase:
IPW60R055CFD7 SP001686062
Tags
IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube
***ronik
N-CH 600V 153A 55mOhm TO-247-3
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 38A, 150Deg C, 178W; Transistor Polarity:n Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 38A, 150DEG C, 178W; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:178W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 38A, 150° C, 178W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:38A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.046ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:178W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
Teil # Mfg. Beschreibung Aktie Preis
IPW60R055CFD7XKSA1
DISTI # V36:1790_19082808		Infineon Technologies AG600V CoolMOS CFD7 Power Transistor0
    IPW60R055CFD7XKSA1
    DISTI # IPW60R055CFD7XKSA1-ND    		Infineon Technologies AGHIGH POWER_NEW
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 720:$7.2965
    • 240:$8.5672
    • 10:$10.2620
    • 1:$11.3200
    IPW60R055CFD7XKSA1
    DISTI # SP001686062    		Infineon Technologies AGTrans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube (Alt: SP001686062)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 240
    • 1:€5.7900
    • 10:€5.2900
    • 25:€5.0900
    • 50:€4.8900
    • 100:€4.6900
    • 500:€4.4900
    • 1000:€4.1900
    IPW60R055CFD7XKSA1
    DISTI # IPW60R055CFD7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R055CFD7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$5.4900
    • 480:$5.2900
    • 960:$5.0900
    • 1440:$4.8900
    • 2400:$4.7900
    IPW60R055CFD7XKSA1
    DISTI # 71AC0408    		Infineon Technologies AGMOSFET, 600V, 38A, 150DEG C, 178W,Transistor Polarity:N Channel,Continuous Drain Current Id:38A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$5.9600
    • 250:$6.5400
    • 100:$6.8500
    • 50:$7.3700
    • 25:$7.8900
    • 10:$8.2700
    • 1:$9.1500
    IPW60R055CFD7XKSA1
    DISTI # 726-IPW60R055CFD7XKS    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$9.1500
    • 10:$8.2700
    • 25:$7.8900
    • 100:$6.8500
    • 250:$6.5400
    • 500:$5.9600
    IPW60R055CFD7XKSA1
    DISTI # 2916150    		Infineon Technologies AGMOSFET, 600V, 38A, 150DEG C, 178W
    RoHS: Compliant    		233
    • 100:£5.4300
    • 50:£5.8400
    • 10:£6.2600
    • 5:£7.2600
    • 1:£7.8400
    IPW60R055CFD7XKSA1
    DISTI # 2916150    		Infineon Technologies AGMOSFET, 600V, 38A, 150DEG C, 178W
    RoHS: Compliant    		233
    • 250:$8.2100
    • 100:$8.6300
    • 50:$9.1000
    • 10:$9.6300
    • 5:$10.8800
    • 1:$11.6400
    IPW60R055CFD7XKSA1
    DISTI # XSKDRABV0030590    		Infineon Technologies AG 
    RoHS: Compliant    		720 in Stock0 on Order
    • 720:$8.0160
    • 240:$8.5920
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von IPW60R055CFD7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    9,15 $
    9,15 $
    10
    8,27 $
    82,70 $
    25
    7,89 $
    197,25 $
    100
    6,85 $
    685,00 $
    250
    6,54 $
    1 635,00 $
    500
    5,96 $
    2 980,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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