BC856UE6327HTSA1

Mfr. #:: BC856UE6327HTSA1
Hersteller:: Infineon Technologies
Beschreibung:: Bipolar Transistors - BJT AF TRANSISTORS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BC856UE6327HTSA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: Bipolartransistoren - BJT

Paket / Koffer:: SOT-26-6

Verpackung:: Spule

Marke:: Infineon-Technologien

Produktart:: BJTs - Bipolartransistoren

Unterkategorie:: Transistoren

Teil # Aliase:: 856U BC BC856UE6327XT E6327 SP000012620

Tags: BC856UE, BC856U, BC856, BC85, BC8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BC856UE6327HTSA1 Beschreibung

***ponent Sense: Bipolar Transistors - BJT PNP Silicon AF Transistor Arrays

***et Europe: Trans GP BJT PNP 65V 0.1A 6-Pin SC-74 T/R

***ineon: PNP Silicon AF Transistor Arrays | Summary of Features: High current gain; Low collector-emitter saturation voltage; Two (galvanic) internal isolated transistor with good matching in one package; BC856S / U, BC857S: For orientation in reel see package information below; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: For AF input stages and driver applications

***ical: Trans GP BJT PNP 65V 0.1A Automotive 3-Pin TO-236AB T/R

***i-Key: TRANS PNP 65V 0.1A SC-75

*** Americas: STANDARD MARKING * REEL PACK, SMD, 7'

***el Electronic: MULTI-CELL LIB PROTECTION

***ure Electronics: DTA143EUA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-70

***ark: Trans Digital Bjt Pnp 100Ma 3-Pin Umt T/r Rohs Compliant: Yes

***nell: TRANSISTOR; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R

***ark: Bipolar (BJT) Single Transistor, PNP, 50 V, 250 MHz, 200 mW, 100 mA, 80 RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***ure Electronics: DTA143Z Series 50 V 100 mA Surface Mount PNP Digital Transistor - UMT3

***ical: Trans Digital BJT PNP 50V 100mA 3-Pin UMT T/R

***ment14 APAC: Transistor; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA; Base Input

***nell: TRANSISTOR; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTA143Z Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***ure Electronics: Bipolar Transistors - Pre-Biased PNP 50V 100MA

***ical: Trans Digital BJT PNP 50V 100mA 3-Pin UMT T/R

***ark: Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:-50V; Continuous Collector Current Ic:-100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:10Kohm; Resistor Ratio, R1 / R2:-; No. Of Pins:3 Pin Rohs Compliant: Yes

***p One Stop Global: Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R

*** Americas: SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

***i-Key: TRANS PREBIAS PNP 50V 0.1A USM

***S: French Electronic Distributor since 1988

***et: Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R

***i-Key: TRANS PREBIAS PNP 50V 0.1A USM

***el Electronic: IC REG BOOST 30V 0.26A SOT23-6

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BC856UE6327HTSA1 DISTI # V36:1790_06391640	Infineon Technologies AG	Trans GP BJT PNP 65V 0.1A Automotive 6-Pin SC-74 T/R RoHS: Compliant	0	2700000:$0.0497 270000:$0.0590 27000:$0.0606
BC856UE6327HTSA1 DISTI # BC856UE6327HTSA1TR-ND	Infineon Technologies AG	TRANS 2PNP 65V 0.1A SC74-6 RoHS: Compliant Min Qty: 27000 Container: Tape & Reel (TR)	Limited Supply - Call	27000:$0.0606
BC856UE6327HTSA1 DISTI # BC856UE6327HTSA1	Infineon Technologies AG	Trans GP BJT PNP 65V 0.1A 6-Pin SC74 T/R - Bulk (Alt: BC856UE6327HTSA1) RoHS: Compliant Min Qty: 12500 Container: Bulk	Americas - 0	125000:$0.0254 62500:$0.0259 37500:$0.0268 25000:$0.0278 12500:$0.0288
BC856UE6327HTSA1 DISTI # BC856UE6327HTSA1	Infineon Technologies AG	Trans GP BJT PNP 65V 0.1A 6-Pin SC74 T/R - Tape and Reel (Alt: BC856UE6327HTSA1) RoHS: Compliant Min Qty: 27000 Container: Reel	Americas - 0	270000:$0.0386 135000:$0.0393 81000:$0.0407 54000:$0.0422 27000:$0.0438
BC 856U E6327 DISTI # 726-BC856UE6327	Infineon Technologies AG	Bipolar Transistors - BJT PNP Silicon AF Transistor Arrays RoHS: Compliant	0	1:$0.4300 10:$0.2780 100:$0.1190 1000:$0.0920 3000:$0.0700 9000:$0.0620 24000:$0.0580
BC856UE6327HTSA1 DISTI # N/A	Infineon Technologies AG	Bipolar Transistors - BJT AF TRANSISTORS	0
BC856UE6327HTSA1	Infineon Technologies AG	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon RoHS: Compliant	162000	1:$0.0300 25:$0.0300 100:$0.0300 500:$0.0300 1000:$0.0300
BC856UE6327HTSA1 DISTI # XSKDRABV0051970	Infineon Technologies AG	RoHS: Compliant	18000 in Stock0 on Order	18000:$0.0507 12000:$0.0543

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: BC856UE6327HTSA1

OMO.#: OMO-BC856UE6327HTSA1

Bipolar Transistors - BJT AF TRANSISTORS

Mfr.#: BC856UE6327

OMO.#: OMO-BC856UE6327-1190

Transistor: PNP x2, bipolar, 65V, 100mA, 250mW, SC74

Mfr.#: BC856UE6327HTSA1

OMO.#: OMO-BC856UE6327HTSA1-INFINEON-TECHNOLOGIES

TRANS 2PNP 65V 0.1A SC74-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von BC856UE6327HTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

BC856UE 4
BC856U 5
BC856 270
BC85 1084
BC8 3559

BC856UE6327HTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes