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FZT853TA

FZT853TA
Mfr. #:
FZT853TA
Hersteller:
Diodes Incorporated
Beschreibung:
Bipolar Transistors - BJT NPN High Current
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FZT853TA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
100 V
Kollektor- Basisspannung VCBO:
200 V
Emitter- Basisspannung VEBO:
7 V
Kollektor-Emitter-Sättigungsspannung:
340 mV
Maximaler DC-Kollektorstrom:
10 A
Bandbreitenprodukt fT gewinnen:
130 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FZT853
DC-Stromverstärkung hFE Max:
100
Höhe:
1.65 mm
Länge:
6.7 mm
Verpackung:
Spule
Breite:
3.7 mm
Marke:
Eingebaute Dioden
Kontinuierlicher Kollektorstrom:
6 A
DC-Kollektor/Basisverstärkung hfe Min:
20 at 10 A, 2 V
Pd - Verlustleistung:
3 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.003951 oz
Tags
FZT853T, FZT853, FZT85, FZT8, FZT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FZT853 Series NPN 6 A 100 V SMT Silicon High Performance Transistor - SOT-223
***ow.cn
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
***ronik
NPN TRANSISTOR 100V 6A 3WSOT223
***nell
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Typ Gain Bandwidth ft:130MHz; Power Dissipation Pd:3W; DC Collector Current:6A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Max Current Ic:6A; Max Current Ic Continuous a:6A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:50mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT853; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:200V
***ure Electronics
DZT853 Series 100 V 6 A 1 W NPN Surface Mount Transistor - SOT-223
***ical
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
***el Electronic
Bipolar Transistors - BJT 1W 100V 6A
***ark
Pwr Low Sat Transistor Sot223 T&r 2.5K
***ure Electronics
ZXTN2011G Series 100 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-223
***C
Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R
***(Formerly Allied Electronics)
100V NPN Low Saturat. Transistor SOT-223
***ure Electronics
ZX5T853G Series NPN 6 A 100 V SMT Silicon Medium Power Transistor - SOT-223
***C
Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R
***(Formerly Allied Electronics)
100V NPN Low Saturat. Transistor SOT-223
***ure Electronics
NZT Series NPN 1000 mW 110 V 1.5 A Surface Mount Darlington Transistor - SOT-223
*** Stop Electro
Small Signal Bipolar Transistor, 1.5A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Darlington NPN 110V 1.5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***nell
TRANSISTOR, NPN, 110V, 1.5A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 110V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.5A; DC Current Gain hFE: 200hFE; Tr
***ure Electronics
PZTA29 Series NPN 1 W 100 V 800 mA Surface Mount Darlington Transistor - SOT-223
***ark
Transistor,bjt,darlington,npn,800Ma I(C),sot-223 Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Darlington NPN 100V 0.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***ure Electronics
PZTA28 Series 1 W 80 V 0.8 A Surface Mount NPN Darlington Transistor - SOT-223
***r Electronics
Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Darlington NPN 80V 0.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***enic
80V 1W 800mA 10000@10mA5V 125MHz 1.5V@100mA100Ã×A NPN -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
***rchild Semiconductor
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.
***ark
Transistor; Transistor Type:Darlington; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:80V; Collector Emitter Saturation Voltage, Vce(sat):1.2V; Power Dissipation, Pd:1000mW; DC Current Gain Min (hfe):10000 ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
FZT853TA
DISTI # FZT853CT-ND		Diodes IncorporatedTRANS NPN 100V 6A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4492In Stock
  • 500:$0.6028
  • 100:$0.7297
  • 10:$0.9360
  • 1:$1.0500
FZT853TA
DISTI # FZT853TR-ND		Diodes IncorporatedTRANS NPN 100V 6A SOT-223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		3000In Stock
  • 10000:$0.3942
  • 5000:$0.4096
  • 2000:$0.4312
  • 1000:$0.4620
FZT853TA
DISTI # FZT853TA		Diodes IncorporatedTrans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FZT853TA)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.3829
  • 2000:$0.3639
  • 4000:$0.3469
  • 6000:$0.3309
  • 10000:$0.3239
FZT853TA
DISTI # FZT853TA		Diodes IncorporatedTrans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R (Alt: FZT853TA)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 1000:$0.3864
  • 2000:$0.3694
  • 3000:$0.3538
  • 5000:$0.3441
  • 10000:$0.3394
  • 25000:$0.3305
  • 50000:$0.3220
FZT853TA
DISTI # 70438279		Diodes IncorporatedSMT NPN transistor,FZT853 6A Ic 2Vce
RoHS: Compliant		0
  • 25:$0.9180
  • 100:$0.8000
  • 250:$0.7210
  • 500:$0.6570
FZT853TA
DISTI # 522-FZT853TA		Diodes IncorporatedBipolar Transistors - BJT NPN High Current
RoHS: Compliant		358
  • 1:$0.9200
  • 10:$0.7840
  • 100:$0.6030
  • 500:$0.5330
  • 1000:$0.4200
FZT853TAZetex / Diodes Inc 1000
    FZT853TA
    DISTI # 2156638P    		Zetex / Diodes IncSMT NPN TRANSISTOR FZT853 6A IC 2VCE, RL22351
    • 30:£0.3500
    • 50:£0.3100
    • 250:£0.2900
    • 500:£0.2700
    FZT853TA
    DISTI # 2156638    		Zetex / Diodes IncSMT NPN TRANSISTOR FZT853 6A IC 2VCE, EA694
    • 1:£2.0000
    • 30:£0.3500
    • 50:£0.3100
    • 250:£0.2900
    • 500:£0.2700
    FZT853TADiodes IncorporatedINSTOCK1391
      FZT853TA CTDiodes IncorporatedINSTOCK2206
        FZT853TA
        DISTI # XSFP00000085604        		Diodes Incorporated 
        RoHS: Compliant        		39015
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1989
          Menge eingeben:
          Der aktuelle Preis von FZT853TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,91 $
          0,91 $
          10
          0,78 $
          7,84 $
          100
          0,60 $
          60,30 $
          500
          0,53 $
          266,50 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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