FDU8586

Mfr. #:: FDU8586
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 20V 35A I-PAK
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDU8586 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FDU8586 Datasheet FDU8586 Datasheet (P4-P6)FDU8586 Datasheet (P7)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: F

Produktkategorie: FETs - Einzeln

Tags: FDU8, FDU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDU8586 Beschreibung

***i-Key: MOSFET N-CH 20V 35A I-PAK

***ser: MOSFETs 20V,35A,5.5 OHM, NCH, IPAK, PO

***ark: MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes

***ser: MOSFETs- Power and Small Signal 24V 95A N-Channel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 32A I(D), 24V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 24V 12A/32A IPAK

*** Electronics: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ser: MOSFETs- Power and Small Signal 24V 95A N-Channel

***or: MOSFET N-CH 24V 12A IPAK

***el Electronic: RES SMD 1.8 OHM 5% 1/4W 1206

***ical: Trans MOSFET N-CH 25V 35A 3-Pin(3+Tab) IPAK Tube

***r Electronics: Power Field-Effect Transistor, 35A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***S: French Electronic Distributor since 1988

***(Formerly Allied Electronics): MOSFET, N Ch., 20V, 37A, 15 MOHM, 4.7 NC QG, I-PAK, Pb-Free

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:37A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes

***el Electronic: Crystals 32MHz 10pF 80Ohms 4-SMD, No Lead Tape & Reel (TR) 1 (Unlimited) MHz Crystal Fundamental MURATA - XRCGB32M000F2N13R0 - Crystal, 32 MHz, SMD, 2mm x 1.6mm, 30 ppm, 10 pF, 20 ppm, XRCGB Series

***nell: MOSFET, N, 20V, I-PAK; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:37A; Resistance, Rds On:0.015ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.1V; Case Style:I-PAK; Termination Type:Through Hole; Current, Idm Pulse:144A; No. of Pins:3; Power Dissipation:35mW; SMD Marking:35; Time, t Off:9.2ns; Time, t On:5.4ns; Voltage, Vds Max:20V

***ter Electronics: 20V,35A,9 OHM, NCH POWER TRENCH MOSFET

***ark: MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 49.5W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Alternate Case Style: TO-251AA; Capacitance Ciss Typ: 1085pF; Current Id Max: 35A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 175°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pin Configuration: 1(G), 2(D), 3(S); Pulse Current Idm: 159A; Termination Type: Through Hole; Voltage Vds: 20V; Voltage Vds Typ: 20V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.5V

***inecomponents.com: 25V,35A,14OHM, NCH, IPAK, POWER TRENCH MOSFET

***Yang: MOSFET 25V N-Channel PowerTrench MOSFET - Bulk

***r Electronics: Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDU8586 DISTI # FDU8586-ND	ON Semiconductor	MOSFET N-CH 20V 35A I-PAK RoHS: Compliant Min Qty: 1800 Container: Tube	Limited Supply - Call
FDU8586 DISTI # 512-FDU8586	ON Semiconductor	MOSFET 20V 35A 5.5 OHM NCH IPAK PO RoHS: Compliant	0
FDU8586	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 35A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	6297	1000:$0.7600 500:$0.8000 100:$0.8400 25:$0.8700 1:$0.9400

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDU6030BL OMO.#: OMO-FDU6030BL	MOSFET 30V N-Ch PowerTrench
	Mfr.#: FDU37PG2M-K1019 OMO.#: OMO-FDU37PG2M-K1019-697	D-Sub Dualport Connectors D-SUB DUAL PORT
	Mfr.#: FDU1040J-H-R36M-93 OMO.#: OMO-FDU1040J-H-R36M-93-1190	Neu und Original
	Mfr.#: FDU10AN06A0 OMO.#: OMO-FDU10AN06A0-1190	Neu und Original
	Mfr.#: FDU14N05 OMO.#: OMO-FDU14N05-1190	Neu und Original
	Mfr.#: FDU305 OMO.#: OMO-FDU305-1190	Neu und Original
	Mfr.#: FDU5N40 OMO.#: OMO-FDU5N40-1190	Neu und Original
	Mfr.#: FDU8770_F071 OMO.#: OMO-FDU8770-F071-ON-SEMICONDUCTOR	MOSFET N-CH 25V 35A IPAK
	Mfr.#: FDU8880.. OMO.#: OMO-FDU8880--1190	Neu und Original
	Mfr.#: FDUE1040D-R45M OMO.#: OMO-FDUE1040D-R45M-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von FDU8586 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,14 $~~; ~~1,14 $~~

10: ~~1,08 $~~; ~~10,83 $~~

100: ~~1,03 $~~; ~~102,60 $~~

500: ~~0,97 $~~; ~~484,50 $~~

1000: ~~0,91 $~~; ~~912,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDU8 33
FDU 164

FDU8586

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes