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NGTB20N120LWG

NGTB20N120LWG
Mfr. #:
NGTB20N120LWG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 1200V/20A IGBT FSI TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB20N120LWG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB20N120LWG DatasheetNGTB20N120LWG Datasheet (P4-P6)NGTB20N120LWG Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
ON Semiconductor
Produktkategorie
IGBTs - Single
Serie
NGTB20N120L
Verpackung
Rohr
Gewichtseinheit
0.229281 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Leistung max
192W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
40A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
200A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 20A
Schaltenergie
3.1mJ (on), 700μJ (off)
Gate-Gebühr
200nC
Td-ein-aus-25°C
86ns/235ns
Testbedingung
600V, 20A, 10 Ohm, 15V
Pd-Verlustleistung
77 W
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.2 V
Kontinuierlicher Kollektorstrom-bei-25-C
40 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
20 V
Tags
NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 40A 192000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
ON SEMICONDUCTOR - NGTB20N120LWG - IGBT, 1200V, 20A, FS1, TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Ch 1200V 40A FS 1.8V TO247
***nell
IGBT, 1200V, 20A, FS1, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AD Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - Leaded 390pF 100volts C0G LS=5mm +/-5%
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IRG8P25N120 - DISCRETE IGBT WITH
***ark
G8, 1200V, 25A, COPAK-247AD, TUBE
***ical
Trans IGBT Chip N=-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
TrenchStop Series 1200 V 30 A Through Hole IGBT Trench Field Stop - PG-TO247-3-1
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.3pF 25volts C0G +/-0.25pF
***ment14 APAC
IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W
***ineon SCT
Infineon's 1200 V, 15 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N-CH 1200V 30A 229000mW 3-Pin(3+Tab) TO-247 Tube
***-Wing Technology
ON SEMICONDUCTOR - NGTB15N120LWG - IGBT, 1200V, 15A, FS1, TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Ch 1200V 30A FS 1.8V TO247
***S
French Electronic Distributor since 1988
***nell
IGBT, 1200V, 15A, FS1, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ark
Igbt, Single, 1.2Kv, 40A, To-247Ac-3
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IGBT WITH ULTRAFAST SOFT RECOVER
***el Electronic
CAP CER 47PF 100V 5% NP0 RADIAL
***nell
IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No.
***ical
Trans IGBT Chip N-CH 1350V 40A 350000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT, 1350V 20A FS2-RC Induction Heating
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel
*** Source Electronics
IGBT with Monolithic Free Wheeling Diode
***i-Key
IGBT TRENCH/FS 1350V 40A TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
TRANSISTOR, IGBT, 2.2V, 40A, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 394W; Collector Emitter Voltage V(br)ceo: 1.35kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C
***ark
Igbt Single Transistor, 50 A, 1.85 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1200V, 25A, TO247; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
Teil # Mfg. Beschreibung Aktie Preis
NGTB20N120LWG
DISTI # NGTB20N120LWGOS-ND		ON SemiconductorIGBT 1200V 40A 192W TO247-3
RoHS: Compliant
Min Qty: 150
Container: Tube		Limited Supply - Call
    NGTB20N120LWG
    DISTI # 70341216    		ON SemiconductorIGBT N-Ch 1200V 40A FS 1.8V TO247
    RoHS: Compliant    		0
    • 10:$3.1900
    • 100:$3.0300
    • 250:$2.8800
    • 500:$2.7400
    NGTB20N120LWGON SemiconductorInsulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		555
    • 1000:$1.7500
    • 500:$1.8400
    • 100:$1.9200
    • 25:$2.0000
    • 1:$2.1500
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von NGTB20N120LWG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,62 $
    2,62 $
    10
    2,49 $
    24,94 $
    100
    2,36 $
    236,25 $
    500
    2,23 $
    1 115,65 $
    1000
    2,10 $
    2 100,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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