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BFN19H6327XTSA1

BFN19H6327XTSA1
Mfr. #:
BFN19H6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
Bipolar Transistors - BJT AF TRANSISTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BFN19H6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Bipolartransistoren - BJT
Paket / Koffer:
SOT-89-4
Verpackung:
Spule
Marke:
Infineon-Technologien
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Teil # Aliase:
19 BFN H6327 SP001125292
Tags
BFN19H, BFN19, BFN1, BFN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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TRANSISTOR, BIPOL, PNP, -300V, TO-226AA; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -500mA; DC Current Gain hFE: 25hFE
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TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 300mW; DC Collector Current: -500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): -500mV; Current Ic Continuous a Max: -500mA; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 40; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
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TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:40; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:10mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2D; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:300V
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Teil # Mfg. Beschreibung Aktie Preis
BFN19H6327XTSA1
DISTI # BFN19H6327XTSA1-ND		Infineon Technologies AGTRANSISTOR AF SOT89-4
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 6000:$0.1390
BFN19H6327XTSA1
DISTI # BFN19H6327XTSA1		Infineon Technologies AGTrans GP BJT PNP 300V 0.2A 3-Pin SOT-89 T/R - Tape and Reel (Alt: BFN19H6327XTSA1)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.0929
  • 8000:$0.0899
  • 14000:$0.0859
  • 30000:$0.0829
  • 60000:$0.0819
BFN19H6327XTSA1
DISTI # BFN19H6327XTSA1		Infineon Technologies AGTrans GP BJT PNP 300V 200mA 3-Pin SOT-89 T/R (Alt: BFN19H6327XTSA1)
RoHS: Compliant
Min Qty: 6000		Americas - 0
  • 6000:$0.0929
  • 8000:$0.0899
  • 14000:$0.0859
  • 30000:$0.0829
  • 60000:$0.0819
BFN19H6327XTSA1
DISTI # SP001125292		Infineon Technologies AGTrans GP BJT PNP 300V 0.2A 3-Pin SOT-89 T/R (Alt: SP001125292)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€0.1129
  • 2000:€0.1079
  • 4000:€0.1029
  • 6000:€0.0969
  • 10000:€0.0959
BFN19H6327XTSA1
DISTI # 726-BFN19H6327XTSA1		Infineon Technologies AGBipolar Transistors - BJT AF TRANSISTORS0
    BFN19H6327XTSA1Infineon Technologies AGSmall Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon
    RoHS: Compliant    		8000
    • 1000:$0.1300
    • 500:$0.1400
    • 25:$0.1500
    • 100:$0.1500
    • 1:$0.1600
    Bild Teil # Beschreibung
    BFN19H6327XTSA1

    Mfr.#: BFN19H6327XTSA1

    OMO.#: OMO-BFN19H6327XTSA1

    		 Bipolar Transistors - BJT AF TRANSISTORS
    BFN19H6327

    Mfr.#: BFN19H6327

    OMO.#: OMO-BFN19H6327-1190

    		 Neu und Original
    BFN19H6327XTSA1

    Mfr.#: BFN19H6327XTSA1

    OMO.#: OMO-BFN19H6327XTSA1-INFINEON-TECHNOLOGIES

    		 Bipolar Transistors - BJT AF TRANSISTORS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von BFN19H6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,40 $
    0,40 $
    10
    0,34 $
    3,39 $
    100
    0,21 $
    20,70 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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