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BSC057N08NS3GATMA1

BSC057N08NS3GATMA1
Mfr. #:
BSC057N08NS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC057N08NS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
5.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
114 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
40 S
Entwicklungs-Kit:
EVAL_1K4W_ZVS_FB_CFD7
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
32 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
BSC057N08NS3 BSC57N8NS3GXT G SP000447542
Gewichtseinheit:
0.003527 oz
Tags
BSC057N08NS3, BSC057N08, BSC057, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
***ure Electronics
Single N-Channel 80 V 11 mOhm 56 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Teil # Mfg. Beschreibung Aktie Preis
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9314
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON EP - Tape and Reel (Alt: BSC057N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7499
  • 10000:$0.7229
  • 20000:$0.6969
  • 30000:$0.6739
  • 50000:$0.6619
BSC057N08NS3GATMA1
DISTI # 79X1332		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1:$1.9200
  • 10:$1.6300
  • 25:$1.5200
  • 50:$1.4200
  • 100:$1.3100
  • 250:$1.2300
  • 500:$1.1400
  • 1000:$0.9450
BSC057N08NS3 G
DISTI # 726-BSC057N08NS3G		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3100
  • 500:$1.1400
  • 1000:$0.9450
BSC057N08NS3GATMA1
DISTI # 726-BSC057N08NS3GATM		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3100
  • 500:$1.1400
  • 1000:$0.9450
BSC057N08NS3GATMA1
DISTI # 2432707		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$3.0400
  • 10:$2.5900
  • 100:$2.0700
BSC057N08NS3GATMA1
DISTI # 2432707RL		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$3.0400
  • 10:$2.5900
  • 100:$2.0700
BSC057N08NS3GATMA1
DISTI # 2432707		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
RoHS: Compliant		0
  • 5:£1.7200
  • 25:£1.5800
  • 100:£1.2600
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von BSC057N08NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,91 $
1,91 $
10
1,62 $
16,20 $
100
1,30 $
130,00 $
500
1,14 $
570,00 $
1000
0,94 $
945,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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