SKW07N120

SKW07N120
Mfr. #:
SKW07N120
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors FAST IGBT NPT TECH 1200V 8A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKW07N120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
IGBTs - Single
Serie
SKW07N120
Verpackung
Rohr
Teil-Aliasnamen
SKW07N120FKSA1 SKW07N120XK SP000012569
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Aufbau
Single
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
16.5 A
Tags
SKW0, SKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SKW07N120FKSA1
DISTI # SKW07N120FKSA1-ND
Infineon Technologies AGIGBT 1200V 16.5A 125W TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    SKW07N120FKSA1
    DISTI # 47W3749
    Infineon Technologies AGIGBT, NPT, 1200V, 16.5A, 125W, TO247,DC Collector Current:16.5A,Collector Emitter Saturation Voltage Vce(on):3.1V,Power Dissipation Pd:125W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Product Range:-,MSL:- , RoHS Compliant: Yes0
      SKW07N120FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 16.5A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
      RoHS: Compliant
      6999
      • 1000:$3.5400
      • 500:$3.7300
      • 100:$3.8800
      • 25:$4.0500
      • 1:$4.3600
      SKW07N120
      DISTI # 726-SKW07N120
      Infineon Technologies AGIGBT Transistors FAST IGBT NPT TECH 1200V 8A
      RoHS: Compliant
      0
        SKW07N120FKSA1
        DISTI # N/A
        Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
          Bild Teil # Beschreibung
          SKW07N120FKSA1

          Mfr.#: SKW07N120FKSA1

          OMO.#: OMO-SKW07N120FKSA1

          IGBT Transistors IGBT PRODUCTS
          SKW07N120

          Mfr.#: SKW07N120

          OMO.#: OMO-SKW07N120-126

          IGBT Transistors FAST IGBT NPT TECH 1200V 8A
          SKW01

          Mfr.#: SKW01

          OMO.#: OMO-SKW01-1190

          Neu und Original
          SKW01R

          Mfr.#: SKW01R

          OMO.#: OMO-SKW01R-1190

          Neu und Original
          SKW02

          Mfr.#: SKW02

          OMO.#: OMO-SKW02-1190

          Neu und Original
          SKW07N120FKSA1

          Mfr.#: SKW07N120FKSA1

          OMO.#: OMO-SKW07N120FKSA1-INFINEON-TECHNOLOGIES

          IGBT 1200V 16.5A 125W TO247
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2000
          Menge eingeben:
          Der aktuelle Preis von SKW07N120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          5,24 $
          5,24 $
          10
          4,97 $
          49,73 $
          100
          4,71 $
          471,15 $
          500
          4,45 $
          2 224,90 $
          1000
          4,19 $
          4 188,00 $
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