FDS6984S

Mfr. #:: FDS6984S
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDS6984S Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: FETs - Arrays

Serie: PowerTrenchR, SyncFET

Verpackung: Digi-ReelR

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Lieferanten-Geräte-Paket: 8-SO

FET-Typ: 2 N-Channel (Dual)

Leistung max: 900mW

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 1233pF @ 15V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 5.5A, 8.5A

Rds-On-Max-Id-Vgs: 19 mOhm @ 8.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Lade-Qg-Vgs: 12nC @ 5V

Tags: FDS6984S, FDS6984, FDS698, FDS69, FDS6, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS6984S Beschreibung

***Yang: Transistor MOSFET Array Dual N-Channel 30V 5.5A/8.5A 8-Pin SOIC N T/R - Bulk

***roFlash: Trans Mosfet N-ch 30V 5.5A/8.5A 8-PIN SOIC N T/r

***i-Key: MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

***S: French Electronic Distributor since 1988

***et: TRANS MOSFET P-CH 30V 7A 8SOIC

***ser: MOSFETs 30V P-CH DUAL PowerTrench MOSFET

***inecomponents.com: 30V/25, 23/35MO, PCH, DUAL, SO8, 500A GOX, PTII

***DA Technology Co., Ltd.: Product Description Demo for Development.

***S: French Electronic Distributor since 1988

***emi: Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY

***Yang: Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R - Tape and Reel

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.024ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R

***ser: MOSFETs- Power and Small Signal 30V 6A N-Channel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***(Formerly Allied Electronics): SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R / MOSFET 2N-CH 30V 6.9A 8-SOIC

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***et: Trans MOSFET N-CH 30V 7A 8-Pin DSO T/R

***el Nordic: Contact for details

***et Japan: Transistor MOSFET Array Dual N-CH 30V 6.9A 8-Pin SOIC T/R

***ineon SCT: Automotive Q101 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, AUTO, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.4W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDS6984S DISTI # FDS6984STR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS6984S DISTI # FDS6984SCT-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDS6984S DISTI # FDS6984SDKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDS6984S	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	716268	1000:$1.5300 500:$1.6100 100:$1.6800 25:$1.7500 1:$1.8800
FDS6984S DISTI # 512-FDS6984S	ON Semiconductor	MOSFET SO-8 DUAL N-CH RoHS: Compliant	0
FDS6984S_Q DISTI # 512-FDS6984S_Q	ON Semiconductor	MOSFET SO-8 DUAL N-CH RoHS: Not compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDS6930A OMO.#: OMO-FDS6930A	MOSFET SO-8 DUAL N-CH
	Mfr.#: FDS6162N3 OMO.#: OMO-FDS6162N3	MOSFET 20V N-Ch PowerTrench
	Mfr.#: FDS6064N3 OMO.#: OMO-FDS6064N3-ON-SEMICONDUCTOR	MOSFET N-CH 20V 23A 8-SOIC
	Mfr.#: FDS6672 , HZS12A1TD-P-E OMO.#: OMO-FDS6672-HZS12A1TD-P-E-1190	Neu und Original
	Mfr.#: FDS6679 OMO.#: OMO-FDS6679-ON-SEMICONDUCTOR	MOSFET P-CH 30V 13A 8SOIC
	Mfr.#: FDS6682-NL OMO.#: OMO-FDS6682-NL-1190	Neu und Original
	Mfr.#: FDS6694A-NL OMO.#: OMO-FDS6694A-NL-1190	Neu und Original
	Mfr.#: FDS6574A-CUT TAPE OMO.#: OMO-FDS6574A-CUT-TAPE-1190	Neu und Original
	Mfr.#: FDS6681Z-CUT TAPE OMO.#: OMO-FDS6681Z-CUT-TAPE-1190	Neu und Original
	Mfr.#: FDS6690AS-CUT TAPE OMO.#: OMO-FDS6690AS-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von FDS6984S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,78 $~~; ~~1,78 $~~

10: ~~1,70 $~~; ~~16,96 $~~

100: ~~1,61 $~~; ~~160,65 $~~

500: ~~1,52 $~~; ~~758,65 $~~

1000: ~~1,43 $~~; ~~1 428,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDS6984S 4
FDS6984 6
FDS698 31
FDS69 103
FDS6 349
FDS 1298

FDS6984S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes