AS4C16M32SC-7TINTR

AS4C16M32SC-7TINTR
Mfr. #:
AS4C16M32SC-7TINTR
Hersteller:
Alliance Memory
Beschreibung:
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS4C16M32SC-7TINTR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS4C16M32SC-7TINTR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Allianzgedächtnis
Produktkategorie:
DRAM
RoHS:
Y
Typ:
SDRAM
Datenbusbreite:
32 bit
Organisation:
16 M x 32
Paket / Koffer:
TSOP-86
Speichergröße:
512 Mbit
Maximale Taktfrequenz:
143 MHz
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
3 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
AS4C16M32SC
Verpackung:
Spule
Marke:
Allianzgedächtnis
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
DRAM
Werkspackungsmenge:
1000
Unterkategorie:
Speicher & Datenspeicherung
Tags
AS4C16M3, AS4C16M, AS4C16, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
Bild Teil # Beschreibung
AS4C16M32MSA-6BINTR

Mfr.#: AS4C16M32MSA-6BINTR

OMO.#: OMO-AS4C16M32MSA-6BINTR

DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
AS4C16M32MD1-5BINTR

Mfr.#: AS4C16M32MD1-5BINTR

OMO.#: OMO-AS4C16M32MD1-5BINTR

DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
AS4C16M32MD1-5BCNTR

Mfr.#: AS4C16M32MD1-5BCNTR

OMO.#: OMO-AS4C16M32MD1-5BCNTR

DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
AS4C16M32MSA-6BIN

Mfr.#: AS4C16M32MSA-6BIN

OMO.#: OMO-AS4C16M32MSA-6BIN

DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
AS4C16M32MS-7BCN

Mfr.#: AS4C16M32MS-7BCN

OMO.#: OMO-AS4C16M32MS-7BCN

DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
AS4C16M32MD1-5BINTR

Mfr.#: AS4C16M32MD1-5BINTR

OMO.#: OMO-AS4C16M32MD1-5BINTR-ALLIANCE-MEMORY

DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
AS4C16M32MD1-5BCNTR

Mfr.#: AS4C16M32MD1-5BCNTR

OMO.#: OMO-AS4C16M32MD1-5BCNTR-ALLIANCE-MEMORY

IC DRAM 512M PARALLEL 90FBGA
AS4C16M32SC-7TIN

Mfr.#: AS4C16M32SC-7TIN

OMO.#: OMO-AS4C16M32SC-7TIN-ALLIANCE-MEMORY

512MB SDR 16M x 32 3.3V 54PIN TSOP II 133 MHZ
AS4C16M32MS-7BCNTR

Mfr.#: AS4C16M32MS-7BCNTR

OMO.#: OMO-AS4C16M32MS-7BCNTR-ALLIANCE-MEMORY

IC DRAM 512M PARALLEL 90FBGA
AS4C16M32MSA-6BINTR

Mfr.#: AS4C16M32MSA-6BINTR

OMO.#: OMO-AS4C16M32MSA-6BINTR-ALLIANCE-MEMORY

IC DRAM 512M PARALLEL 90FBGA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von AS4C16M32SC-7TINTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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