IRF7606TRPBF

Mfr. #:: IRF7606TRPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT PCh -30V -3.6A 90mOhm 20nC Micro 8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF7606TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF7606TRPBF Datasheet IRF7606TRPBF Datasheet (P4-P6)IRF7606TRPBF Datasheet (P7)
ECAD Model:
Mehr Informationen:: IRF7606TRPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: Micro-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 3.6 A

Rds On - Drain-Source-Widerstand:: 90 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 20 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.8 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 1.11 mm

Länge:: 3 mm

Transistortyp:: 1 P-Channel

Breite:: 3 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 2.3 S

Abfallzeit:: 39 ns

Produktart:: MOSFET

Anstiegszeit:: 20 ns

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 43 ns

Typische Einschaltverzögerungszeit:: 13 ns

Teil # Aliase:: SP001563726

Gewichtseinheit:: 0.000901 oz

Tags: IRF7606T, IRF7606, IRF760, IRF76, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7606TRPBF Beschreibung

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.075Ohm;ID -3.6A;Micro8;PD 1.8W;VGS +/-20V

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS

***ure Electronics: Single P-Channel 30 V 90 mOhm 30 nC HEXFET® Power Mosfet - MICRO-8

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-3.6A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.8W; Drain Source On Resistance @ 10V:90mohm; Drain Source On Resistance @ 4.5V:150mohm ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ineon SCT: 30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS

***Yang: MOSFET Array N-CH/P-CH 30V 2.7A/2A 8-Pin uSOIC T/R - Product that comes on tape, but is not reeled (

***ment14 APAC: MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2A; Current Id Max:2.7A; On State Resistance @ Vgs = 10V N Channel:900mohm; On State Resistance @ Vgs = 10V P Channel:170mohm; On State Resistance @ Vgs = 4.5V N Channel:140mohm; On State Resistance @ Vgs = 4.5V P Channel:300mohm; Package / Case:Micro8; Power Dissipation Pd:1.25W; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 240 / Power Dissipation (Pd) W = 1.25

***ineon: Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual N-Channel MOSFET

***ure Electronics: Dual N-Channel 30 V 0.222 Ohm 12 nC HEXFET® Power Mosfet - MICRO-8

***ineon SCT: 30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS

***ment14 APAC: DUAL N CHANNEL MOSFET, 30V, MICRO8; Tran; DUAL N CHANNEL MOSFET, 30V, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:2.4A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.135ohm; Rds(on) Test Voltage Vgs:10V

***ark: DUAL N CHANNEL MOSFET, 30V, MICRO8, FULL REEL; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:2.4A; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 2.4 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 135 / Gate-Source Voltage V = 20 / Fall Time ns = 5.3 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25

***ineon: Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual P-Channel MOSFET

***et Europe: Transistor MOSFET Array Dual P-CH 30V 1.7A 8-Pin Micro8 T/R

***ineon SCT: -30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS

***ure Electronics: Dual P-Channel 30 V 0.27 Ohm 7.5 nC HEXFET® Power Mosfet - MICRO-8

***ment14 APAC: TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.7A; Current Id Max:-1.7A; Drain Source Voltage Vds:-30V; Module Configuration:Dual; On Resistance Rds(on):270mohm; Package / Case:MicroSOIC; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

***ure Electronics: ZXM64N02X Series 20 V 0.04 Ohm N-Channel Enhancement Mode MOSFET -MSOP-8

***ical: Trans MOSFET N-CH 20V 5.4A Automotive 8-Pin MSOP T/R

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: MSOP-8 Polarity: N Variants: Enhancement mode Power dissipation: 1.1 W

***ernational Rectifier: -20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package

***et Europe: Trans MOSFET P-CH 20V 4.3A 8-Pin Micro T/R

***akorn: MOSFET P-CH DUAL 20V 4.3A MICRO8

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Continuous Drain Current, Id:-4.3A; Package/Case:Micro8; Power Dissipation, Pd:1.25W; Continuous Drain Current - 100 Deg C:-3.4A ;RoHS Compliant: Yes

IRF7606TRPBF Mehr Informationen

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF7606TRPBF DISTI # C1S327400931049	Infineon Technologies AG	Trans MOSFET P-CH Si 30V 3.6A 8-Pin Micro T/R RoHS: Compliant	10000	100:$0.3240 50:$0.3960 10:$0.5940
IRF7606TRPBF DISTI # IRF7606TRPBFCT-ND	Infineon Technologies AG	MOSFET P-CH 30V 3.6A MICRO8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3489In Stock	1000:$0.2991 500:$0.3739 100:$0.5048 10:$0.6540 1:$0.7500
IRF7606TRPBF DISTI # IRF7606TRPBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 3.6A MICRO8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3489In Stock	1000:$0.2991 500:$0.3739 100:$0.5048 10:$0.6540 1:$0.7500
IRF7606TRPBF DISTI # IRF7606TRPBFTR-ND	Infineon Technologies AG	MOSFET P-CH 30V 3.6A MICRO8 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.2632
IRF7606TRPBF DISTI # V72:2272_13890891	Infineon Technologies AG	Trans MOSFET P-CH Si 30V 3.6A 8-Pin Micro T/R RoHS: Compliant	3750	1:$0.2148
IRF7606TRPBF DISTI # 13537611	Infineon Technologies AG	Trans MOSFET P-CH Si 30V 3.6A 8-Pin Micro T/R RoHS: Compliant	4000	4000:$0.1685
IRF7606TRPBF DISTI # 31396472	Infineon Technologies AG	Trans MOSFET P-CH Si 30V 3.6A 8-Pin Micro T/R RoHS: Compliant	3750	38:$0.2148
IRF7606TRPBF DISTI # IRF7606TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 3.6A 8-Pin Micro T/R - Tape and Reel (Alt: IRF7606TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.1899 8000:$0.1829 16000:$0.1759 24000:$0.1699 40000:$0.1669
IRF7606TRPBF DISTI # IRF7606TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 3.6A 8-Pin Micro T/R (Alt: IRF7606TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.2079 8000:$0.2021 12000:$0.1966 20000:$0.1915 40000:$0.1890 100000:$0.1865 200000:$0.1842
IRF7606TRPBF DISTI # 43AC3291	Infineon Technologies AG	MOSFET, P-CH, -30V, -3.6A, USOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power RoHS Compliant: Yes	3975	1:$0.6200 10:$0.5120 25:$0.4510 50:$0.3910 100:$0.3300 250:$0.3080 500:$0.2860 1000:$0.2640
IRF7606TRPBF DISTI # 70017003	Infineon Technologies AG	MOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.075Ohm,ID -3.6A,Micro8,PD 1.8W,VGS +/-20V RoHS: Compliant	0	4000:$0.6570
IRF7606TRPBF DISTI # 942-IRF7606TRPBF	Infineon Technologies AG	MOSFET MOSFT PCh -30V -3.6A 90mOhm 20nC Micro 8 RoHS: Compliant	4543	1:$0.6200 10:$0.5120 100:$0.3300 1000:$0.2640 4000:$0.2230
IRF7606TRPBF	International Rectifier		3693
IRF7606TRPBF DISTI # 2803414	Infineon Technologies AG	MOSFET, P-CH, -30V, -3.6A, USOIC-8 RoHS: Compliant	3975	5:$0.8040 25:$0.7000 100:$0.5710 250:$0.4820 500:$0.4180 1000:$0.3950 5000:$0.3740
IRF7606TRPBF DISTI # 2803414	Infineon Technologies AG	MOSFET, P-CH, -30V, -3.6A, USOIC-8 RoHS: Compliant	3975	5:£0.4570 25:£0.4240 100:£0.2610 250:£0.2330 500:£0.2040

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von IRF7606TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,61 $~~; ~~0,61 $~~

10: ~~0,51 $~~; ~~5,12 $~~

100: ~~0,33 $~~; ~~33,00 $~~

1000: ~~0,26 $~~; ~~264,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF7606TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes