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IRF540ZLPBF

IRF540ZLPBF
Mfr. #:
IRF540ZLPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF540ZLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF540ZLPBF DatasheetIRF540ZLPBF Datasheet (P4-P6)IRF540ZLPBF Datasheet (P7-P9)IRF540ZLPBF Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
IRF540ZLPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
36 A
Rds On - Drain-Source-Widerstand:
26.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
92 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Transistortyp:
1 N-Channel
Typ:
Automobil-MOSFET
Breite:
4.5 mm
Marke:
Infineon-Technologien
Abfallzeit:
39 ns
Produktart:
MOSFET
Anstiegszeit:
51 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
43 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SP001559652
Gewichtseinheit:
0.084199 oz
Tags
IRF540Z, IRF540, IRF54, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-262;PD 92W;VGS +/-20
***ure Electronics
Single N-Channel 100 V 26.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:36A; On Resistance, Rds(on):26.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 36A, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 92W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
IRF540N/Z Advanced HEXFET® Power MOSFETs
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF540ZLPBF
DISTI # IRF540ZLPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 36A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		531In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IRF540ZLPBF
DISTI # IRF540ZLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF540ZLPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tube		Americas - 0
  • 4000:$0.4139
  • 6000:$0.3999
  • 10000:$0.3849
  • 20000:$0.3719
  • 40000:$0.3649
IRF540ZLPBF
DISTI # SP001559652		Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 (Alt: SP001559652)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.6619
  • 10:€0.5879
  • 25:€0.5299
  • 50:€0.4809
  • 100:€0.4409
  • 500:€0.4069
  • 1000:€0.3779
IRF540ZLPBF
DISTI # 49AC0323		Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes3430
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 70017276		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,TO-262,PD 92W,VGS +/-20
RoHS: Compliant		0
  • 1:$2.5800
  • 2:$2.5280
  • 5:$2.4510
  • 10:$2.3480
  • 25:$2.1930
IRF540ZLPBF
DISTI # 942-IRF540ZLPBF		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
RoHS: Compliant		1348
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 2839479		Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant		3430
  • 5:$1.9500
  • 25:$1.7000
  • 100:$1.3900
  • 250:$1.1700
  • 500:$1.0100
  • 1000:$0.9600
  • 5000:$0.9100
IRF540ZLPBF
DISTI # 2839479		Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant		3495
  • 5:£0.8680
  • 25:£0.7800
  • 100:£0.5990
  • 250:£0.5640
  • 500:£0.5280
Bild Teil # Beschreibung
88E1518-A0-NNB2C000

Mfr.#: 88E1518-A0-NNB2C000

OMO.#: OMO-88E1518-A0-NNB2C000

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SS1FL3-M3/H

Mfr.#: SS1FL3-M3/H

OMO.#: OMO-SS1FL3-M3-H

 Schottky Diodes & Rectifiers If 1A Vrrm 30V DO-219AB Ifsm 40A
VSSAF3M6HM3/H

Mfr.#: VSSAF3M6HM3/H

OMO.#: OMO-VSSAF3M6HM3-H

 Schottky Diodes & Rectifiers TMBS 60V Vrrm eSMP AEC-Q101 Qualified
VSSAF3M6HM3/H

Mfr.#: VSSAF3M6HM3/H

OMO.#: OMO-VSSAF3M6HM3-H-VISHAY

 DIODE SCHOTTKY 60V 3A DO221AC
204226-1001

Mfr.#: 204226-1001

OMO.#: OMO-204226-1001-1190

 Unclassified
204220-0006

Mfr.#: 204220-0006

OMO.#: OMO-204220-0006--1

 Housing Squba Sealed Receptacle Crimp 6 Circuits Single Row 1.8mm Pitch Nylon Black Tray (Alt: 2042200006)
88E1518-A0-NNB2C000

Mfr.#: 88E1518-A0-NNB2C000

OMO.#: OMO-88E1518-A0-NNB2C000-1190

 Integrated 10/100/1000 Mbps Energy Efficient Ethernet Transceiver (Alt: 88E1518-A0-NNB2C000)
K104K15X7RF53H5

Mfr.#: K104K15X7RF53H5

OMO.#: OMO-K104K15X7RF53H5-VISHAY

 Multilayer Ceramic Capacitors MLCC - Leaded 0.1uF 50volts 10% X7R 5mm LS
315-93-164-41-001000

Mfr.#: 315-93-164-41-001000

OMO.#: OMO-315-93-164-41-001000-MILL-MAX

 IC & Component Sockets 64 POS LOW PRO .1"
SS1FL3-M3/H

Mfr.#: SS1FL3-M3/H

OMO.#: OMO-SS1FL3-M3-H-VISHAY

 Schottky Diodes & Rectifiers If 1A Vrrm 30V DO-219AB Ifsm 40A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRF540ZLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,18 $
1,18 $
10
1,00 $
10,00 $
100
0,78 $
77,50 $
500
0,68 $
342,50 $
1000
0,54 $
540,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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