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SI2312BDS-T1-GE3

SI2312BDS-T1-GE3
Mfr. #:
SI2312BDS-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2312BDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2312BDS-T1-GE3 DatasheetSI2312BDS-T1-GE3 Datasheet (P4-P6)SI2312BDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI2312BDS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
3.9 A
Rds On - Drain-Source-Widerstand:
31 mOhms
Vgs th - Gate-Source-Schwellenspannung:
450 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
7.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
0.75 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.45 mm
Länge:
2.9 mm
Serie:
SI2
Transistortyp:
1 N-Channel
Breite:
1.6 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
30 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
9 ns
Teil # Aliase:
SI2312BDS-GE3
Gewichtseinheit:
0.000282 oz
Tags
SI2312BDS-T, SI2312BDS, SI2312B, SI2312, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
***ical
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850Mv; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:30ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2312BDS-T1-GE3
DISTI # V72:2272_09216793		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1161
  • 1000:$0.2142
  • 500:$0.2783
  • 250:$0.3181
  • 100:$0.3534
  • 25:$0.4250
  • 10:$0.5194
  • 1:$0.6006
SI2312BDS-T1-GE3
DISTI # V36:1790_09216793		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.2127
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		160229In Stock
  • 1000:$0.1798
  • 500:$0.2327
  • 100:$0.2961
  • 10:$0.3970
  • 1:$0.4600
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		160229In Stock
  • 1000:$0.1798
  • 500:$0.2327
  • 100:$0.2961
  • 10:$0.3970
  • 1:$0.4600
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		159000In Stock
  • 75000:$0.1301
  • 30000:$0.1314
  • 15000:$0.1386
  • 6000:$0.1489
  • 3000:$0.1592
SI2312BDS-T1-GE3
DISTI # 33707813		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.1688
SI2312BDS-T1-GE3
DISTI # 32142891		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1161
  • 35:$0.6006
SI2312BDS-T1-GE3
DISTI # 30601987		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		49
  • 23:$1.1000
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 150000:$0.1125
  • 75000:$0.1144
  • 30000:$0.1164
  • 15000:$0.1205
  • 9000:$0.1250
  • 6000:$0.1298
  • 3000:$0.1350
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1919
  • 18000:€0.2059
  • 12000:€0.2239
  • 6000:€0.2599
  • 3000:€0.3809
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1254
  • 18000:$0.1288
  • 12000:$0.1325
  • 6000:$0.1381
  • 3000:$0.1424
SI2312BDS-T1-GE3
DISTI # 16P3709		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes0
  • 1000:$0.2180
  • 500:$0.2820
  • 250:$0.3130
  • 100:$0.3430
  • 50:$0.4030
  • 25:$0.4630
  • 1:$0.6060
SI2312BDS-T1-GE3
DISTI # 29X0523		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins,MSL:-RoHS Compliant: Yes0
  • 50000:$0.1680
  • 30000:$0.1760
  • 20000:$0.1890
  • 10000:$0.2020
  • 5000:$0.2190
  • 1:$0.2240
SI2312BDS-T1-GE3.
DISTI # 16AC0252		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No0
  • 50000:$0.1680
  • 30000:$0.1760
  • 20000:$0.1890
  • 10000:$0.2020
  • 5000:$0.2190
  • 1:$0.2240
SI2312BDS-T1-GE3
DISTI # 781-SI2312BDS-T1-GE3		Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
RoHS: Compliant		8300
  • 1:$0.6100
  • 10:$0.4690
  • 100:$0.3480
  • 500:$0.2860
  • 1000:$0.2210
  • 3000:$0.2010
SI2312BDS-T1-GE3Vishay IntertechnologiesSingle N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
RoHS: Compliant		75Cut Tape/Mini-Reel
  • 1:$0.2900
  • 100:$0.1880
  • 250:$0.1720
  • 500:$0.1610
  • 1500:$0.1460
SI2312BDST1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
RoHS: Compliant		45000
    SI2312BDS-T1-GE3Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
    RoHS: Compliant    		Americas - 3000
      SI2312BDS-T1-GE3
      DISTI # C1S803605191265      		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
      RoHS: Compliant      		49
      • 10:$0.4020
      • 1:$0.8800
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1991
      Menge eingeben:
      Der aktuelle Preis von SI2312BDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,61 $
      0,61 $
      10
      0,47 $
      4,69 $
      100
      0,35 $
      34,80 $
      500
      0,29 $
      143,00 $
      1000
      0,22 $
      221,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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