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BGA7H1BN6E6327XTSA1

BGA7H1BN6E6327XTSA1
Mfr. #:
BGA7H1BN6E6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
IC RF AMP LTE 1.805GHZ-2.69GHZ
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BGA7H1BN6E6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
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BGA7H1BN6E6327XTSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
BGA7H1B, BGA7H, BGA7, BGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs
***ical
Low Noise Amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE
***ineon
BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc | Summary of Features: Insertion power gain: 12.3 dB; Low noise figure: 0.85 dB; Low current consumption: 4.3 mA; Insertion loss in bypass mode: -3.1 dB; Operating frequencies: 1805 - 2690 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
RF Solutions
Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.
Teil # Mfg. Beschreibung Aktie Preis
BGA7H1BN6E6327XTSA1
DISTI # BGA7H1BN6E6327XTSA1-ND		Infineon Technologies AGIC RF AMP LTE 1.805GHZ-2.69GHZ
RoHS: Compliant
Min Qty: 15000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.2145
BGA7H1BN6E6327XTSA1
DISTI # BGA7H1BN6E6327XTSA1		Infineon Technologies AGRF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs - Tape and Reel (Alt: BGA7H1BN6E6327XTSA1)
RoHS: Compliant
Min Qty: 15000
Container: Reel		Americas - 0
  • 150000:$0.2089
  • 90000:$0.2129
  • 60000:$0.2199
  • 30000:$0.2289
  • 15000:$0.2369
BGA7H1BN6E6327XTSA1
DISTI # 726-BGA7H1BN6E6327XT		Infineon Technologies AGRF Amplifier RF SILICON MMIC
RoHS: Compliant		0
  • 1:$0.6200
  • 10:$0.5120
  • 100:$0.3300
  • 1000:$0.2640
  • 2500:$0.2230
  • 10000:$0.2150
  • 15000:$0.2070
Bild Teil # Beschreibung
BGA7H1BN6E6327XTSA1

Mfr.#: BGA7H1BN6E6327XTSA1

OMO.#: OMO-BGA7H1BN6E6327XTSA1

 RF Amplifier RF SILICON MMIC
BGA7H1BN6E6327

Mfr.#: BGA7H1BN6E6327

OMO.#: OMO-BGA7H1BN6E6327-INFINEON-TECHNOLOGIES

 Neu und Original
BGA7H1BN6E6327XTSA1INFIN

Mfr.#: BGA7H1BN6E6327XTSA1INFIN

OMO.#: OMO-BGA7H1BN6E6327XTSA1INFIN-INFINEON-TECHNOLOGIES

 Neu und Original
BGA7H1BN6E6327XTSA1

Mfr.#: BGA7H1BN6E6327XTSA1

OMO.#: OMO-BGA7H1BN6E6327XTSA1-INFINEON-TECHNOLOGIES

 IC RF AMP LTE 1.805GHZ-2.69GHZ
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von BGA7H1BN6E6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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