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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PSMN035-150P,127 DISTI # V79:2366_18854995 | Nexperia | Trans MOSFET N-CH Si 150V 50A 3-Pin(3+Tab) TO-220AB Rail | 9270 |
|
| PSMN035-150P,127 DISTI # 1727-4661-ND | Nexperia | MOSFET N-CH 150V 50A SOT78 RoHS: Compliant Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| PSMN035-150P,127 DISTI # C1S537100185307 | Nexperia | Trans MOSFET N-CH Si 150V 50A 3-Pin(3+Tab) TO-220AB Rail RoHS: Compliant | 50 |
|
| PSMN035-150P,127 DISTI # 26123405 | Nexperia | Trans MOSFET N-CH Si 150V 50A 3-Pin(3+Tab) TO-220AB Rail | 9270 |
|
| PSMN035-150P | NXP Semiconductors | Now Nexperia PSMN035-150P - Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 100 |
|
| PSMN035-150P127 | NXP Semiconductors | Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 30233 |
|
| PSMN035-150P127 | Nexperia | Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 |
|
| PSMN035-150P,127 DISTI # 771-PSMN035-150P127 | Nexperia | MOSFET RAIL PWR-MOS RoHS: Compliant | 1413 |
|
| PSMN035-150P DISTI # 771-PSMN035-150P | Nexperia | MOSFET RAIL PWR-MOS RoHS: Compliant | 0 | |
| PSMN035150P | Philips Semiconductors | RoHS: Not Compliant | Europe - 100 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: PSMN030 OMO.#: OMO-PSMN030-1190 |
Neu und Original |
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Mfr.#: PSMN030-150P127 OMO.#: OMO-PSMN030-150P127-1190 |
Now Nexperia PSMN030-150P - Power Field-Effect Transistor, 55.5A I(D), 150V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |
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Mfr.#: PSMN030150P OMO.#: OMO-PSMN030150P-1190 |
Neu und Original |
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Mfr.#: PSMN034-100PS OMO.#: OMO-PSMN034-100PS-1190 |
MOSFET,N CHANNEL,100V,32A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:32A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0293ohm, Rds(on) Test Voltage Vgs:10V, |
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Mfr.#: PSMN035-150P OMO.#: OMO-PSMN035-150P-1190 |
Now Nexperia PSMN035-150P - Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: PSMN035-150P/B OMO.#: OMO-PSMN035-150P-B-1190 |
Neu und Original |
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Mfr.#: PSMN035-150P127 OMO.#: OMO-PSMN035-150P127-1190 |
Now Nexperia PSMN035-150P - Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |
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Mfr.#: PSMN038-100K OMO.#: OMO-PSMN038-100K-1190 |
6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
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Mfr.#: PSMN039-100YS OMO.#: OMO-PSMN039-100YS-1190 |
MOSFET,N CHANNEL,100V,28.1A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:28.1A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0308ohm, Rds(on) Test Voltage Vgs:10V, |
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Mfr.#: PSMN035-100LS,115 |
IGBT Transistors MOSFET N-CHAN 100V 27A |
