FF200R12MT4

FF200R12MT4
Mfr. #:
FF200R12MT4
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Modules IGBT-MODULE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FF200R12MT4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon
Produktkategorie
Modul
Produkt
IGBT Silizium Module
Verpackung
Kasten
Montageart
Schraube
Paket-Koffer
Econo D
Aufbau
Dual
Pd-Verlustleistung
1050 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.15 V
Kontinuierlicher Kollektorstrom-bei-25-C
295 A
Gate-Emitter-Leckstrom
400 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
FF200R12, FF200R1, FF200R, FF200, FF20, FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 295A 10-pin ECONOD-2
***i-Key
IGBT MODULE VCES 1200V 200A
***omponent
Infineon power module
***et
MEDIUM POWER ECONO
***ineon
EconoDUAL 2 1200V dual IGBT module with fast trench/fieldstop IGBT4, Emitter Controlled 4 diode and NTC | Summary of Features: High Short Circuit Capability; Self Limiting Short Circuit Current; Low Switching Losses; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact module concept; Optimized development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; induction-heating; welding
Teil # Mfg. Beschreibung Aktie Preis
FF200R12MT4BOMA1
DISTI # FF200R12MT4BOMA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 200A
RoHS: Not compliant
Min Qty: 14
Container: Bulk
Limited Supply - Call
    FF200R12MT4
    DISTI # FF200R12MT4
    Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 295A 10-pin ECONOD-2 - Bulk (Alt: FF200R12MT4)
    RoHS: Not Compliant
    Min Qty: 4
    Container: Bulk
    Americas - 0
    • 4:$54.2900
    • 6:$52.2900
    • 10:$50.3900
    • 20:$48.6900
    • 40:$47.7900
    FF200R12MT4BOMA1
    DISTI # FF200R12MT4BOMA1
    Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FF200R12MT4BOMA1)
    Min Qty: 4
    Container: Bulk
    Americas - 0
      FF200R12MT4
      DISTI # 641-FF200R12MT4
      Infineon Technologies AGIGBT Modules IGBT-MODULE
      RoHS: Compliant
      0
        FF200R12MT4Infineon Technologies AGInsulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel
        RoHS: Compliant
        147
        • 1000:$95.2900
        • 500:$100.3100
        • 100:$104.4300
        • 25:$108.9000
        • 1:$117.2800
        FF200R12MT4BOMA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel
        RoHS: Compliant
        540
        • 1000:$87.3600
        • 500:$91.9500
        • 100:$95.7300
        • 25:$99.8400
        • 1:$107.5100
        Bild Teil # Beschreibung
        FF200R12KT3

        Mfr.#: FF200R12KT3

        OMO.#: OMO-FF200R12KT3

        IGBT Modules N-CH 1.2KV 295A
        FF200R12KT3_E

        Mfr.#: FF200R12KT3_E

        OMO.#: OMO-FF200R12KT3-E

        IGBT Modules IGBT 1200V 200A
        FF200R12KE3_B2

        Mfr.#: FF200R12KE3_B2

        OMO.#: OMO-FF200R12KE3-B2

        IGBT Modules N-CH 1.2KV 295A
        FF200R12KT3_E

        Mfr.#: FF200R12KT3_E

        OMO.#: OMO-FF200R12KT3-E-125

        IGBT Modules IGBT 1200V 200A
        FF200R06YE3

        Mfr.#: FF200R06YE3

        OMO.#: OMO-FF200R06YE3-125

        IGBT Modules IGBT 600V 200A
        FF200R12KE3_G

        Mfr.#: FF200R12KE3_G

        OMO.#: OMO-FF200R12KE3-G-1190

        Neu und Original
        FF200R12KT3 FF200R12KE3

        Mfr.#: FF200R12KT3 FF200R12KE3

        OMO.#: OMO-FF200R12KT3-FF200R12KE3-1190

        Neu und Original
        FF200R17KE3HOSA1

        Mfr.#: FF200R17KE3HOSA1

        OMO.#: OMO-FF200R17KE3HOSA1-INFINEON-TECHNOLOGIES

        IGBT MODULE 1700V 200A
        FF200R33KF2CNOSA1

        Mfr.#: FF200R33KF2CNOSA1

        OMO.#: OMO-FF200R33KF2CNOSA1-INFINEON-TECHNOLOGIES

        IGBT MODULE VCES 1200V 200A
        FF200R12KT3HOSA1

        Mfr.#: FF200R12KT3HOSA1

        OMO.#: OMO-FF200R12KT3HOSA1-INFINEON-TECHNOLOGIES

        Trench and Field Stop IGBT4un
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3500
        Menge eingeben:
        Der aktuelle Preis von FF200R12MT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        142,94 $
        142,94 $
        10
        135,79 $
        1 357,88 $
        100
        128,64 $
        12 864,15 $
        500
        121,49 $
        60 747,40 $
        1000
        114,35 $
        114 348,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
        Beginnen mit
        Neueste Produkte
        Top