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IRF1404ZLPBF

IRF1404ZLPBF
Mfr. #:
IRF1404ZLPBF
Hersteller:
IR
Beschreibung:
IGBT Transistors MOSFET MOSFT 40V 190A 3.7mOhm 100nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF1404ZLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Tags
IRF1404Z, IRF1404, IRF140, IRF14, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***ical
Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-262
***i-Key
MOSFET N-CH 40V 120A TO-262
*** International
IRF1404ZLPBF IR
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 40V, 160A, TO-262; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:180A; Power Dissipation Pd:200W; Voltage Vgs Max:20V
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushless Motor Drive
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 40V 180A Automotive 3-Pin(3+Tab) TO-262 Tube
***ure Electronics
Single N-Channel 40 V 5.9 mOhm 75 nC Automotive HEXFET® Power Mosfet - TO-262-3
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET,W DIODE,N CH,40V,160A,TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:16V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS +/-20V
***ure Electronics
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262
***roFlash
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
***(Formerly Allied Electronics)
MOSFET, 30V, 140A, 6 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-262
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
64-2105PBF
DISTI # 64-2105PBF-ND		Infineon Technologies AGMOSFET N-CH 40V 75A TO-262
RoHS: Compliant
Min Qty: 350
Container: Tube		Limited Supply - Call
    IRF1404ZLPBF
    DISTI # 70018166    		Infineon Technologies AG40V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-262 PACKAGE
    RoHS: Compliant    		0
    • 350:$3.6100
    • 700:$3.5380
    • 1750:$3.4300
    • 3500:$3.2850
    • 8750:$3.0690
    IRF1404ZLPBF
    DISTI # 942-IRF1404ZLPBF    		Infineon Technologies AGMOSFET MOSFT 40V 190A 3.7mOhm 100nC
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      IRF1405STRLPBF

      Mfr.#: IRF1405STRLPBF

      OMO.#: OMO-IRF1405STRLPBF

      		 MOSFET MOSFT 55V 131A 5.3mOhm 170nC
      IRF1404LPBF

      Mfr.#: IRF1404LPBF

      OMO.#: OMO-IRF1404LPBF

      		 MOSFET MOSFT 40V 162A 4mOhm 160nC
      IRF1405ZSTRLPBF

      Mfr.#: IRF1405ZSTRLPBF

      OMO.#: OMO-IRF1405ZSTRLPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 75A D2PAK
      IRF1404ZSTRR

      Mfr.#: IRF1404ZSTRR

      OMO.#: OMO-IRF1404ZSTRR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 40V 180A D2PAK
      IRF1404PBF,IRF1407PBF

      Mfr.#: IRF1404PBF,IRF1407PBF

      OMO.#: OMO-IRF1404PBF-IRF1407PBF-1190

      		 Neu und Original
      IRF1404ZPBF,IRF2907ZPBF,

      Mfr.#: IRF1404ZPBF,IRF2907ZPBF,

      OMO.#: OMO-IRF1404ZPBF-IRF2907ZPBF--1190

      		 Neu und Original
      IRF1404ZS

      Mfr.#: IRF1404ZS

      OMO.#: OMO-IRF1404ZS-1190

      		 Neu und Original
      IRF1404ZSTRRPBF

      Mfr.#: IRF1404ZSTRRPBF

      OMO.#: OMO-IRF1404ZSTRRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 40V 180A D2PAK
      IRF1405ZS-7P

      Mfr.#: IRF1405ZS-7P

      OMO.#: OMO-IRF1405ZS-7P-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 120A D2PAK7
      IRF1407

      Mfr.#: IRF1407

      OMO.#: OMO-IRF1407-1190

      		 POWER FIELD-EFFECT TRANSISTOR, 130A I(D), 75V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IRF1404ZLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,60 $
      4,60 $
      10
      4,37 $
      43,73 $
      100
      4,14 $
      414,32 $
      500
      3,91 $
      1 956,50 $
      1000
      3,68 $
      3 682,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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