SI5517DU-T1-GE3

Mfr. #:: SI5517DU-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N/P-CH 20V 6A CHIPFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI5517DU-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Arrays

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI5517DU-GE3

Montageart: SMD/SMT

Paket-Koffer: PowerPAKR ChipFET Dual

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: PowerPAKR ChipFet Dual

Aufbau: 1 N-Channel 1 P-Channel

FET-Typ: N- und P-Kanal

Leistung max: 8.3W

Transistor-Typ: 1 N-Channel 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 20V

Eingangskapazität-Ciss-Vds: 520pF @ 10V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 39 mOhm @ 4.4A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 16nC @ 8V

Pd-Verlustleistung: 2.3 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 10 ns 55 ns

Anstiegszeit: 65 ns 35 ns

Vgs-Gate-Source-Spannung: 8 V

ID-Dauer-Drain-Strom: 7.2 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Widerstand: 32 mOhms 60 mOhms

Transistor-Polarität: N-Kanal P-Kanal

Typische-Ausschaltverzögerungszeit: 40 ns 40 ns

Typische-Einschaltverzögerungszeit: 20 ns 8 ns

Kanal-Modus: Erweiterung

Tags: SI5517, SI551, SI55, SI5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5517DU-T1-GE3 Beschreibung

***p One Stop Global: Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R

***Components: On a Reel of 3000, Dual N/P-Channel-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay SI5517DU-T1-GE3

***ure Electronics: MOSFET 20V 6.0A 8.3W 39/72mohm @ 4.5V

***ied Electronics & Automation: Trans MOSFET N/P-CH 20V 7.2A/4.6

***i-Key: MOSFET N/P-CH 20V 6A CHIPFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:PowerPAK ChipFET Dual; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI5517DU-T1-GE3 DISTI # V36:1790_09216229	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # V72:2272_09216229	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	10	10:$0.7040 1:$0.9199
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5739In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5739In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.5236
SI5517DU-T1-GE3 DISTI # 30306435	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.4282 6000:$0.3294 9000:$0.2621 15000:$0.2215 30000:$0.2039 75000:$0.1976 150000:$0.1917
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5517DU-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.8369 6000:€0.6009 12000:€0.4869 18000:€0.4309 30000:€0.4119
SI5517DU-T1-GE3 DISTI # 16P3788	Vishay Intertechnologies	DUAL N/P CH MOSFET, 20V, POWERPAK, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):32mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$0.4770 3000:$0.4740 6000:$0.4510 12000:$0.4000
SI5517DU-T1-GE3 DISTI # 09X6441	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6A, POWERPAK-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$0.9320 10:$0.9030 100:$0.7120 250:$0.6770 500:$0.6320 1000:$0.5060
SI5517DU-T1-GE3 DISTI # 70616987	Vishay Siliconix	Trans MOSFET N/P-CH 20V 7.2A/4.6 RoHS: Compliant	0	300:$0.7700 600:$0.6500 1500:$0.5700 3000:$0.5400
SI5517DU-T1-GE3 DISTI # 781-SI5517DU-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs PowerPAK ChipFET RoHS: Compliant	3065	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI5517DU-T1-GE3 DISTI # 8181334P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 20V 7.2A/4.6, RL	3160	200:£0.2510
SI5517DUT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 6000
SI5517DU-T1-GE3 DISTI # C1S803601298171	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # C1S806001096569	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	10	10:$0.7967

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI5517DU-T1-GE3 OMO.#: OMO-SI5517DU-T1-GE3	MOSFET 20V Vds 8V Vgs PowerPAK ChipFET
	Mfr.#: SI5517DU-T1-E3 OMO.#: OMO-SI5517DU-T1-E3-VISHAY	MOSFET N/P-CH 20V 6A CHIPFET
	Mfr.#: SI5517DU-T1-GE3 OMO.#: OMO-SI5517DU-T1-GE3-VISHAY	MOSFET N/P-CH 20V 6A CHIPFET
	Mfr.#: SI5517DU-T1-GE3DKR-ND OMO.#: OMO-SI5517DU-T1-GE3DKR-ND-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SI5517DU-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,64 $~~; ~~0,64 $~~

10: ~~0,60 $~~; ~~6,03 $~~

100: ~~0,57 $~~; ~~57,15 $~~

500: ~~0,54 $~~; ~~269,85 $~~

1000: ~~0,51 $~~; ~~508,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI5517 3
SI551 30
SI55 57
SI5 8250

SI5517DU-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes