IPU80R4K5P7AKMA1

IPU80R4K5P7AKMA1
Mfr. #:
IPU80R4K5P7AKMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPU80R4K5P7AKMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
1.5 A
Rds On - Drain-Source-Widerstand:
4.5 Ohms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
4 nC
Minimale Betriebstemperatur:
- 50 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Serie:
CoolMOS P7
Breite:
2.38 mm
Marke:
Infineon-Technologien
Abfallzeit:
80 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
1500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
IPU80R4K5P7 SP001422748
Gewichtseinheit:
0.011993 oz
Tags
IPU80, IPU8, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - IPAK
***ark
Mosfet, N-Ch, 800V, 1.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):3.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Teil # Mfg. Beschreibung Aktie Preis
IPU80R4K5P7AKMA1
DISTI # 33723599
Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A Tube1500
  • 1500:$0.2363
IPU80R4K5P7AKMA1
DISTI # IPU80R4K5P7AKMA1-ND
Infineon Technologies AGMOSFET N-CH 800V 1.5A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
1500In Stock
  • 6000:$0.2673
  • 3000:$0.2871
  • 1500:$0.3169
  • 100:$0.5010
  • 25:$0.6140
  • 10:$0.6530
  • 1:$0.7400
IPU80R4K5P7AKMA1
DISTI # V36:1790_16563217
Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A Tube0
  • 1500000:$0.2197
  • 750000:$0.2201
  • 150000:$0.2603
  • 15000:$0.3369
  • 1500:$0.3500
IPU80R4K5P7AKMA1
DISTI # IPU80R4K5P7AKMA1
Infineon Technologies AGTrans MOSFET N 800V 1.5A 3-Pin TO-251 Tube - Bulk (Alt: IPU80R4K5P7AKMA1)
RoHS: Compliant
Min Qty: 1471
Container: Bulk
Americas - 0
  • 14710:$0.2159
  • 7355:$0.2189
  • 4413:$0.2269
  • 2942:$0.2359
  • 1471:$0.2439
IPU80R4K5P7AKMA1
DISTI # IPU80R4K5P7AKMA1
Infineon Technologies AGTrans MOSFET N 800V 1.5A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU80R4K5P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 0
  • 15000:$0.2389
  • 9000:$0.2429
  • 6000:$0.2519
  • 3000:$0.2609
  • 1500:$0.2709
IPU80R4K5P7AKMA1
DISTI # SP001422748
Infineon Technologies AGTrans MOSFET N 800V 1.5A 3-Pin TO-251 Tube (Alt: SP001422748)
RoHS: Compliant
Min Qty: 75
Container: Tube
Europe - 0
  • 750:€0.2239
  • 450:€0.2409
  • 300:€0.2609
  • 150:€0.2849
  • 75:€0.3489
IPU80R4K5P7AKMA1
DISTI # 34AC1730
Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:1.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes1006
  • 1000:$0.3050
  • 500:$0.3430
  • 100:$0.3820
  • 10:$0.5910
  • 1:$0.7070
IPU80R4K5P7AKMA1
DISTI # 726-IPU80R4K5P7AKMA1
Infineon Technologies AGMOSFET
RoHS: Compliant
2514
  • 1:$0.7000
  • 10:$0.5850
  • 100:$0.3780
  • 1000:$0.3020
IPU80R4K5P7AKMA1Infineon Technologies AGPower Field-Effect Transistor, 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
RoHS: Compliant
1470
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
IPU80R4K5P7AKMA1
DISTI # 2781190
Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-251
RoHS: Compliant
1006
  • 5000:$0.3810
  • 1000:$0.4020
  • 500:$0.4250
  • 250:$0.4910
  • 100:$0.5820
  • 25:$0.7120
  • 5:$0.8190
IPU80R4K5P7AKMA1
DISTI # 2781190
Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-2512265
  • 500:£0.2500
  • 250:£0.2690
  • 100:£0.2880
  • 10:£0.4930
  • 1:£0.6110
Bild Teil # Beschreibung
RFN2LAM6STR

Mfr.#: RFN2LAM6STR

OMO.#: OMO-RFN2LAM6STR

Diodes - General Purpose, Power, Switching 600V Vr 1.5A Io Fast Recovery Diode
SISH434DN-T1-GE3

Mfr.#: SISH434DN-T1-GE3

OMO.#: OMO-SISH434DN-T1-GE3

MOSFET 40V Vds; +/-20V Vgs PowerPAK 1212-8SH
IPD95R1K2P7ATMA1

Mfr.#: IPD95R1K2P7ATMA1

OMO.#: OMO-IPD95R1K2P7ATMA1

MOSFET 950 V CoolMOS P7
XPGDWT-H1-0000-00HE1

Mfr.#: XPGDWT-H1-0000-00HE1

OMO.#: OMO-XPGDWT-H1-0000-00HE1

High Power LEDs - White White, 139lm XP-G Gen 3
BBB01-SC-505

Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505

Single Board Computers Beaglebone Black Rev C
RCP-5SPFFH-SCM7001

Mfr.#: RCP-5SPFFH-SCM7001

OMO.#: OMO-RCP-5SPFFH-SCM7001-AMPHENOL-LTW

RJ45,C SIZE
R-78E12-0.5

Mfr.#: R-78E12-0.5

OMO.#: OMO-R-78E12-0-5-RECOM-POWER

0.5A DC/DC-CONVERTER 'INNOLINE
SISH434DN-T1-GE3

Mfr.#: SISH434DN-T1-GE3

OMO.#: OMO-SISH434DN-T1-GE3-VISHAY

MOSFET N-CHAN 40V PPAK 1212-8SH
RFN2LAM6STR

Mfr.#: RFN2LAM6STR

OMO.#: OMO-RFN2LAM6STR-ROHM-SEMI

DIODE GEN PURP 600V 1.5A PMDTM
IPD95R1K2P7ATMA1

Mfr.#: IPD95R1K2P7ATMA1

OMO.#: OMO-IPD95R1K2P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 950V 6A TO252
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von IPU80R4K5P7AKMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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