| Mfr. #: | 2SD1047 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT IGBT & Power Bipola |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | 2SD1047 Datenblatt |


Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.238311 oz Through Hole Mounting-Style TO-3P-3, SC-65-3 Through Hole mounting type Supplier device package: TO-3P Transistor type: NPN Maximum current collector Ic is 12A . Maximum collector-emitter breakdown voltage of 140V DC current gain minimum (hFE) of Ic/Vce at 60 @ 1A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 700mV @ 700mA, 7A Power-off control: 100 W Rated VCEO up to 140 V The transistor polarity is NPN. 6 V rating of 5 V Gain-Bandwidth-Product: 20 MHz This product is capable of handling a 12 A continuous collector current. Minimum hfe for DC collector-base gain is 50.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SD1047 Specifications
A: What is the Series of the product?
Q: The Series of the product is 500V Transistors.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.238311 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-3P-3, SC-65-3.
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-3P
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 12A
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 140V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 60 @ 1A, 5V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 700mV @ 700mA, 7A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 100 W.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 140 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 6 V
A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?
Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 20 MHz
A: At what frequency does the Continuous-Collector-Current?
Q: The product Continuous-Collector-Current is 12 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 50.