2STN1360

Mfr. #: 2STN1360
Hersteller: STMicroelectronics
Beschreibung: Bipolar Transistors - BJT LOW VOLTAGE FAST SWITCHING NPN POWER
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: 2STN1360 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2STN1360 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.006632 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Surface Mount mounting type Supplier device package: SOT-223 Configuration Single Transistor type: NPN Maximum current collector Ic is 3A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 160 @ 1A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 150mA, 3A Power-off control: 1600 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. The 80 V voltage rating is 40 V. 6 V rating of 5 V Max DC collector current: 3 A Gain-Bandwidth-Product: 130 MHz Minimum hfe for DC collector-base gain is 80.

2STN1360 Image

2STN1360

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2STN1360 Specifications
  • Manufacturer ST Microelectronic
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.006632 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-223
  • Configuration Single
  • Power-Max 1.6W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 3A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 160 @ 1A, 2V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 150mA, 3A
  • Current-Collector-Cutoff-Max 100nA (ICBO)
  • Frequency-Transition 130MHz
  • Pd-Power-Dissipation 1600 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 80 V
  • Emitter-Base-Voltage-VEBO 6 V
  • Maximum-DC-Collector-Current 3 A
  • Gain-Bandwidth-Product-fT 130 MHz
  • DC-Collector-Base-Gain-hfe-Min 80

2STN1360

2STN1360 Specifications

2STN1360 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.006632 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-261-4, TO-261AA.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-223

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 3A

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 60V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 160 @ 1A, 2V.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 500mV @ 150mA, 3A.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 1600 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 80 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 6 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 3 A

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 130 MHz.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 80

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