| Mfr. #: | 3STR1630 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT Low Volt High Perf NPN Power Trans |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | 3STR1630 Datenblatt |
Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product TO-236-3, SC-59, SOT-23-3 Surface Mount mounting type Supplier device package: SOT-23-3 Transistor type: NPN Maximum current collector Ic is 6A . Maximum collector-emitter breakdown voltage of 30V DC current gain minimum (hFE) of Ic/Vce at 180 @ 500mA, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 300mV @ 500mA, 5A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
3STR1630 Specifications
A: At what frequency does the Series?
Q: The product Series is -.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-236-3, SC-59, SOT-23-3.
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed SOT-23-3
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 6A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 30V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 180 @ 500mA, 2V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 300mV @ 500mA, 5A.