CSD19536KCS

Mfr. #: CSD19536KCS
Hersteller: Texas Instruments
Beschreibung: MOSFET 100V N-CH NexFET Pwr MOSFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD19536KCS Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19536KCS Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 100 V 259 A continuous drain current Rds On value of 2.7 mOhms Gate-Source Threshold Voltage Range: 2.1 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. 375 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Tube packaging for easy dispensing The height of the product is 16.51 mm. 10.67 mm long The Transistor Type is 1 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 307 S 5 ns fall time MOSFET product type Rise Time is 8 ns. 50 of 100 MOSFETs as subcategory Turn-off delay time is 38 ns. The typical turn-on delay time is 14 ns. 1. 0.211644 oz of Unit Weight

CSD19536KCS Image

CSD19536KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19536KCS Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 259 A
  • Rds On - Drain-Source Resistance: 2.7 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.1 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 118 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd - Power Dissipation: 375 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Tube
  • Height: 16.51 mm
  • Length: 10.67 mm
  • Series: CSD19536KCS
  • Transistor Type: 1 N-Channel
  • Width: 4.7 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 307 S
  • Fall Time: 5 ns
  • Product Type: MOSFET
  • Rise Time: 8 ns
  • Factory Pack Quantity: 50
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 38 ns
  • Typical Turn-On Delay Time: 14 ns
  • Unit Weight: 0.211644 oz

CSD19536KCS

CSD19536KCS Specifications

CSD19536KCS FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is TO-220-3.

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 100 V.

  • A: At what frequency does the Id - Continuous Drain Current?

    Q: The product Id - Continuous Drain Current is 259 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 2.7 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.1 V.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 10 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 175 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 375 W

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Height?

    Q: The product Height is 16.51 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 10.67 mm.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 1 N-Channel.

  • A: At what frequency does the Brand?

    Q: The product Brand is Texas Instruments.

  • A: At what frequency does the Forward Transconductance - Min?

    Q: The product Forward Transconductance - Min is 307 S.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 5 ns

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 8 ns

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 50.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 38 ns.

  • A: Is the cutoff frequency of the product Typical Turn-On Delay Time?

    Q: Yes, the product's Typical Turn-On Delay Time is indeed 14 ns

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.211644 oz.

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