CSD19538Q2

Mfr. #: CSD19538Q2
Hersteller: Texas Instruments
Beschreibung: MOSFET 100V, N ch NexFET MOSFETG , single SON2x2, 59mOhm 6-WSON -55 to 150
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD19538Q2 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19538Q2 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. WSON-FET-6 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 100 V 50 A continuous drain current Rds On value of 59 mOhms Gate-Source Threshold Voltage Range: 2.8 V Gate-Source Voltage: 20 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 20.2 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 0.75 mm. 2 mm long The Transistor Type is 1 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 19 S 2 ns fall time MOSFET product type Rise Time is 3 ns. 3000 of 100 MOSFETs as subcategory Turn-off delay time is 7 ns. The typical turn-on delay time is 5 ns.

CSD19538Q2 Image

CSD19538Q2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19538Q2 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: WSON-FET-6
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 50 A
  • Rds On - Drain-Source Resistance: 59 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.8 V
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 5.6 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 20.2 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 0.75 mm
  • Length: 2 mm
  • Series: CSD19538Q2
  • Transistor Type: 1 N-Channel
  • Width: 2 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 19 S
  • Fall Time: 2 ns
  • Product Type: MOSFET
  • Rise Time: 3 ns
  • Factory Pack Quantity: 3000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 7 ns
  • Typical Turn-On Delay Time: 5 ns

CSD19538Q2

CSD19538Q2 Specifications

CSD19538Q2 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed WSON-FET-6

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 100 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 50 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 59 mOhms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 2.8 V.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 20 V.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 20.2 W.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: At what frequency does the Height?

    Q: The product Height is 0.75 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 2 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Forward Transconductance - Min?

    Q: Yes, the product's Forward Transconductance - Min is indeed 19 S

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 2 ns

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 3 ns

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 3000.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?

    Q: Yes, the product's Typical Turn-Off Delay Time is indeed 7 ns

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 5 ns.

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