CSD25213W10

Mfr. #: CSD25213W10
Hersteller: Texas Instruments
Beschreibung: MOSFET P-CH NexFET Pwr MOSFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD25213W10 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25213W10 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. DSBGA-4 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 20 V 1.6 A continuous drain current Rds On value of 67 mOhms Gate-Source Threshold Voltage Range: 850 mV Gate-Source Voltage: 6 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 1 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 0.62 mm. 1 mm long The Transistor Type is 1 P-Channel. Texas Instruments is a trusted brand for quality electronics 970 ns fall time MOSFET product type Rise Time is 520 ns. 3000 of 100 MOSFETs as subcategory Turn-off delay time is 1 us. The typical turn-on delay time is 510 ns. 1. 0.000039 oz of Unit Weight

CSD25213W10 Image

CSD25213W10

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25213W10 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: DSBGA-4
  • Number of Channels: 1 Channel
  • Transistor Polarity: P-Channel
  • Vds - Drain-Source Breakdown Voltage: 20 V
  • Id - Continuous Drain Current: 1.6 A
  • Rds On - Drain-Source Resistance: 67 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 850 mV
  • Vgs - Gate-Source Voltage: 6 V
  • Qg - Gate Charge: 2.2 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 1 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 0.62 mm
  • Length: 1 mm
  • Series: CSD25213W10
  • Transistor Type: 1 P-Channel
  • Width: 1 mm
  • Brand: Texas Instruments
  • Fall Time: 970 ns
  • Product Type: MOSFET
  • Rise Time: 520 ns
  • Factory Pack Quantity: 3000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 1 us
  • Typical Turn-On Delay Time: 510 ns
  • Unit Weight: 0.000039 oz

CSD25213W10

CSD25213W10 Specifications

CSD25213W10 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is DSBGA-4.

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 1.6 A

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 67 mOhms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 850 mV.

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 6 V

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 1 W.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 0.62 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 1 mm.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 1 P-Channel.

  • A: What is the Brand of the product?

    Q: The Brand of the product is Texas Instruments.

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 970 ns.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 520 ns

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 3000.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 1 us.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 510 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.000039 oz.

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3,40 $
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0,18 $
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