CSD25213W10

Mfr. #: CSD25213W10
Hersteller: Texas Instruments
Beschreibung: MOSFET P-CH NexFET Pwr MOSFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD25213W10 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25213W10 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. DSBGA-4 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 20 V 1.6 A continuous drain current Rds On value of 67 mOhms Gate-Source Threshold Voltage Range: 850 mV Gate-Source Voltage: 6 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 1 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 0.62 mm. 1 mm long The Transistor Type is 1 P-Channel. Texas Instruments is a trusted brand for quality electronics 970 ns fall time MOSFET product type Rise Time is 520 ns. 3000 of 100 MOSFETs as subcategory Turn-off delay time is 1 us. The typical turn-on delay time is 510 ns. 1. 0.000039 oz of Unit Weight

CSD25213W10 Image

CSD25213W10

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25213W10 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: DSBGA-4
  • Number of Channels: 1 Channel
  • Transistor Polarity: P-Channel
  • Vds - Drain-Source Breakdown Voltage: 20 V
  • Id - Continuous Drain Current: 1.6 A
  • Rds On - Drain-Source Resistance: 67 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 850 mV
  • Vgs - Gate-Source Voltage: 6 V
  • Qg - Gate Charge: 2.2 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 1 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 0.62 mm
  • Length: 1 mm
  • Series: CSD25213W10
  • Transistor Type: 1 P-Channel
  • Width: 1 mm
  • Brand: Texas Instruments
  • Fall Time: 970 ns
  • Product Type: MOSFET
  • Rise Time: 520 ns
  • Factory Pack Quantity: 3000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 1 us
  • Typical Turn-On Delay Time: 510 ns
  • Unit Weight: 0.000039 oz

CSD25213W10

CSD25213W10 Specifications

CSD25213W10 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed DSBGA-4

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 20 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 1.6 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 67 mOhms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 850 mV.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 6 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 1 W

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 0.62 mm

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 1 mm

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 P-Channel

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 970 ns

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 520 ns.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 3000.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 1 us.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 510 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.000039 oz.

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