CSD88539NDT

Mfr. #: CSD88539NDT
Hersteller: Texas Instruments
Beschreibung: MOSFET 60V Dual NCh NexFET Pwr MOSFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: CSD88539NDT Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD88539NDT Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. SOIC-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 60 V 11.7 A continuous drain current Rds On value of 28 mOhms Gate-Source Threshold Voltage Range: 2.6 V Gate-Source Voltage: 20 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.1 W This product has a Dual configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1.75 mm. 4.9 mm long The Transistor Type is 2 N-Channel. Texas Instruments is a trusted brand for quality electronics 4 ns fall time MOSFET product type Rise Time is 9 ns. 250 of 100 MOSFETs as subcategory Turn-off delay time is 14 ns. The typical turn-on delay time is 5 ns. 1. 0.019048 oz of Unit Weight

CSD88539NDT Image

CSD88539NDT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD88539NDT Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: SOIC-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 60 V
  • Id - Continuous Drain Current: 11.7 A
  • Rds On - Drain-Source Resistance: 28 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.6 V
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 7.2 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.1 W
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1.75 mm
  • Length: 4.9 mm
  • Series: CSD88539ND
  • Transistor Type: 2 N-Channel
  • Width: 3.9 mm
  • Brand: Texas Instruments
  • Fall Time: 4 ns
  • Product Type: MOSFET
  • Rise Time: 9 ns
  • Factory Pack Quantity: 250
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 14 ns
  • Typical Turn-On Delay Time: 5 ns
  • Unit Weight: 0.019048 oz

CSD88539NDT

CSD88539NDT Specifications

CSD88539NDT FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is SMD/SMT.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is SOIC-8.

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 2 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 60 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 11.7 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 28 mOhms.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2.6 V

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 20 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 2.1 W.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 1.75 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 4.9 mm.

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 2 N-Channel.

  • A: What is the Brand of the product?

    Q: The Brand of the product is Texas Instruments.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 4 ns

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 9 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 250

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 14 ns.

  • A: Is the cutoff frequency of the product Typical Turn-On Delay Time?

    Q: Yes, the product's Typical Turn-On Delay Time is indeed 5 ns

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 0.019048 oz

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