IRF630

Mfr. #: IRF630
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-Ch 200 Volt 10 Amp
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: IRF630 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
IRF630 Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 200 V 9 A continuous drain current Rds On value of 400 mOhms Gate-Source Threshold Voltage Range: 2 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 65 C. The product can operate at a maximum temperature of + 150 C. 75 W This product has a Single configuration. The Channel Mode is set to Enhancement. The height of the product is 9.15 mm. 10.4 mm long The Transistor Type is 1 N-Channel. This device belongs to the MOSFET type. STMicroelectronics is a trusted brand for quality electronics Minimum forward transconductance of 3 S MOSFET product type Rise Time is 15 ns. 1000 of 100 MOSFETs as subcategory The typical turn-on delay time is 10 ns. 1. 0.011640 oz of Unit Weight

IRF630 Image

IRF630

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRF630 Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 200 V
  • Id - Continuous Drain Current: 9 A
  • Rds On - Drain-Source Resistance: 400 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 31 nC
  • Minimum Operating Temperature: - 65 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 75 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Height: 9.15 mm
  • Length: 10.4 mm
  • Series: IRF630
  • Transistor Type: 1 N-Channel
  • Type: MOSFET
  • Width: 4.6 mm
  • Brand: STMicroelectronics
  • Forward Transconductance - Min: 3 S
  • Product Type: MOSFET
  • Rise Time: 15 ns
  • Factory Pack Quantity: 1000
  • Subcategory: MOSFETs
  • Typical Turn-On Delay Time: 10 ns
  • Unit Weight: 0.011640 oz

IRF630

IRF630 Specifications

IRF630 FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is STMicroelectronics.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed TO-220-3

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 200 V

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 9 A

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 400 mOhms

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2 V

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 10 V.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 65 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 75 W

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 9.15 mm

  • A: At what frequency does the Length?

    Q: The product Length is 10.4 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 N-Channel

  • A: What is the Type of the product?

    Q: The Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed STMicroelectronics

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 3 S.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 15 ns

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 1000.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 10 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.011640 oz.

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1
1,03 $
1,03 $
10
0,88 $
8,81 $
100
0,68 $
67,70 $
500
0,60 $
299,00 $
1000
0,47 $
472,00 $
2000
0,42 $
838,00 $
10000
0,40 $
4 030,00 $
25000
0,39 $
9 775,00 $
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