| Mfr. #: | MRF101AN |
|---|---|
| Hersteller: | NXP Semiconductors |
| Beschreibung: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | MRF101AN Datenblatt |
This product is manufactured by NXP. 8.8 A continuous drain current Vds rating of 133 V 21.1 dB is 11.5 dB. Output power: 100 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. Tube packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 7.1 S This product is equipped with 1 Channel for efficient performance. 182 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, + 10 V Gate-Source Threshold Voltage Range: 1.7 V This product is also known by the 935377233129 number of 934069005115.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MRF101AN Specifications
A: At what frequency does the Manufacturer?
Q: The product Manufacturer is NXP.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 8.8 A
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 133 V.
A: What is the Gain of the product?
Q: The Gain of the product is 21.1 dB.
A: At what frequency does the Output Power?
Q: The product Output Power is 100 W.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 40 C.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-220-3.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Type of the product?
Q: The Type of the product is RF Power MOSFET.
A: What is the Brand of the product?
Q: The Brand of the product is NXP Semiconductors.
A: At what frequency does the Forward Transconductance - Min?
Q: The product Forward Transconductance - Min is 7.1 S.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 182 W.
A: Is the cutoff frequency of the product Product Type?
Q: Yes, the product's Product Type is indeed RF MOSFET Transistors
A: Is the cutoff frequency of the product Factory Pack Quantity?
Q: Yes, the product's Factory Pack Quantity is indeed 250
A: What is the Subcategory of the product?
Q: The Subcategory of the product is MOSFETs.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is - 6 V, + 10 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 1.7 V.
A: Is the cutoff frequency of the product Part # Aliases?
Q: Yes, the product's Part # Aliases is indeed 935377233129