| Mfr. #: | MRF101BN |
|---|---|
| Hersteller: | NXP Semiconductors |
| Beschreibung: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | MRF101BN Datenblatt |
This product is manufactured by NXP. 8.8 A continuous drain current Vds rating of 133 V 21.1 dB is 11.5 dB. Output power: 100 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. Tube packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 7.1 S This product is equipped with 1 Channel for efficient performance. 182 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, + 10 V Gate-Source Threshold Voltage Range: 1.7 V This product is also known by the 935377234129 number of 934069005115.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MRF101BN Specifications
A: Is the cutoff frequency of the product Manufacturer?
Q: Yes, the product's Manufacturer is indeed NXP
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 8.8 A
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 133 V.
A: At what frequency does the Gain?
Q: The product Gain is 21.1 dB.
A: Is the cutoff frequency of the product Output Power?
Q: Yes, the product's Output Power is indeed 100 W
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-220-3
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: Is the cutoff frequency of the product Brand?
Q: Yes, the product's Brand is indeed NXP Semiconductors
A: At what frequency does the Forward Transconductance - Min?
Q: The product Forward Transconductance - Min is 7.1 S.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 182 W.
A: Is the cutoff frequency of the product Product Type?
Q: Yes, the product's Product Type is indeed RF MOSFET Transistors
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 250.
A: At what frequency does the Subcategory?
Q: The product Subcategory is MOSFETs.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, + 10 V
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 1.7 V.
A: Is the cutoff frequency of the product Part # Aliases?
Q: Yes, the product's Part # Aliases is indeed 935377234129