MRFX1K80N-230MHZ

MRFX1K80N-230MHZ Overview

This product is manufactured by NXP. 43 A continuous drain current Vds rating of - 500 mV, 179 V 24.4 dB is 11.5 dB. Output power: 1.8 kW The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. OM-1230-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 44.7 S This product is equipped with 2 Channel for efficient performance. 3333 W RF MOSFET Transistors product type 1 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 2.1 V This product is also known by the 935373606598 number of 934069005115.

MRFX1K80N-230MHZ Image

MRFX1K80N-230MHZ Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• RoHS: Y
• Transistor Polarity: Dual N-Channel
• Technology: Si
• Id - Continuous Drain Current: 43 A
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 179 V
• Gain: 24.4 dB
• Output Power: 1.8 kW
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: OM-1230-4
• Operating Frequency: 1.8 MHz to 400 MHz
• Series: MRFX1K80
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Forward Transconductance - Min: 44.7 S
• Number of Channels: 2 Channel
• Pd - Power Dissipation: 3333 W
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 1
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 2.1 V
• Part # Aliases: 935373606598

MRFX1K80N-230MHZ FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: At what frequency does the Id - Continuous Drain Current?

  Q: The product Id - Continuous Drain Current is 43 A.

• A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

  Q: The product Vds - Drain-Source Breakdown Voltage is - 500 mV, 179 V.

• A: What is the Gain of the product?

  Q: The Gain of the product is 24.4 dB.

• A: At what frequency does the Output Power?

  Q: The product Output Power is 1.8 kW.

• A: What is the Minimum Operating Temperature of the product?

  Q: The Minimum Operating Temperature of the product is - 40 C.

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is SMD/SMT.

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed OM-1230-4

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: What is the Brand of the product?

  Q: The Brand of the product is NXP Semiconductors.

• A: Is the cutoff frequency of the product Forward Transconductance - Min?

  Q: Yes, the product's Forward Transconductance - Min is indeed 44.7 S

• A: At what frequency does the Number of Channels?

  Q: The product Number of Channels is 2 Channel.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 3333 W.

• A: At what frequency does the Product Type?

  Q: The product Product Type is RF MOSFET Transistors.

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 1

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed MOSFETs

• A: At what frequency does the Vgs - Gate-Source Voltage?

  Q: The product Vgs - Gate-Source Voltage is - 6 V, 10 V.

• A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

  Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.1 V.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 935373606598.