PRF13750HR9

PRF13750HR9 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 19.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4S-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. RF MOSFET Transistors product type MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V

PRF13750HR9 Image

PRF13750HR9 Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• RoHS: Y
• Transistor Polarity: N-Channel
• Technology: Si
• Id - Continuous Drain Current: 2.8 A
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
• Gain: 19.5 dB
• Output Power: 750 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: NI-1230H-4S-4
• Operating Frequency: 0.7 GHz to 1.3 GHz
• Series: MRF13750H
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Number of Channels: 2 Channel
• Product Type: RF MOSFET Transistors
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 1.3 V

PRF13750HR9 FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is NXP.

• A: Is the cutoff frequency of the product Id - Continuous Drain Current?

  Q: Yes, the product's Id - Continuous Drain Current is indeed 2.8 A

• A: What is the Vds - Drain-Source Breakdown Voltage of the product?

  Q: The Vds - Drain-Source Breakdown Voltage of the product is - 500 mV, 105 V.

• A: Is the cutoff frequency of the product Gain?

  Q: Yes, the product's Gain is indeed 19.5 dB

• A: What is the Output Power of the product?

  Q: The Output Power of the product is 750 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

• A: What is the Maximum Operating Temperature of the product?

  Q: The Maximum Operating Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed SMD/SMT

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is NI-1230H-4S-4.

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: What is the Brand of the product?

  Q: The Brand of the product is NXP Semiconductors.

• A: What is the Number of Channels of the product?

  Q: The Number of Channels of the product is 2 Channel.

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed RF MOSFET Transistors

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is MOSFETs.

• A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

  Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, 10 V

• A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

  Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.3 V