STGF10H60DF

STGF10H60DF Overview

This product is manufactured by STMicroelectronics. TO-220-3 FP package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 600 V. The 1.5 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 20 A 30 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 10 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 1000 of 100 IGBTs as subcategory 1. 0.081130 oz of Unit Weight

STGF10H60DF Image

STGF10H60DF Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-220-3 FP
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Collector-Emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 20 A
• Pd - Power Dissipation: 30 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGF10H60DF
• Continuous Collector Current Ic Max: 10 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 1000
• Subcategory: IGBTs
• Unit Weight: 0.081130 oz

STGF10H60DF FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is STMicroelectronics.

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed TO-220-3 FP

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is Through Hole.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 600 V

• A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?

  Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 1.5 V

• A: What is the Maximum Gate Emitter Voltage of the product?

  Q: The Maximum Gate Emitter Voltage of the product is 20 V.

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 20 A.

• A: Is the cutoff frequency of the product Pd - Power Dissipation?

  Q: Yes, the product's Pd - Power Dissipation is indeed 30 W

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: At what frequency does the Continuous Collector Current Ic Max?

  Q: The product Continuous Collector Current Ic Max is 10 A.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: At what frequency does the Gate-Emitter Leakage Current?

  Q: The product Gate-Emitter Leakage Current is 250 nA.

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed IGBT Transistors

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 1000.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is IGBTs.

• A: Is the cutoff frequency of the product Unit Weight?

  Q: Yes, the product's Unit Weight is indeed 0.081130 oz