STGF10NC60SD

Mfr. #: STGF10NC60SD
Hersteller: STMicroelectronics
Beschreibung: IGBT Transistors 10 A-600 V fast IGBT
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STGF10NC60SD Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGF10NC60SD Overview

This product is manufactured by STMicroelectronics. TO-220-3 FP package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. The maximum 600 V. The 1.45 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 10 A 25 W Tube packaging for easy dispensing STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 100 nA IGBT Transistors product type 50 of 100 IGBTs as subcategory 1. 0.081130 oz of Unit Weight

STGF10NC60SD Image

STGF10NC60SD

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGF10NC60SD Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-220-3 FP
  • Mounting Style: Through Hole
  • Collector- Emitter Voltage VCEO Max: 600 V
  • Collector-Emitter Saturation Voltage: 1.45 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 10 A
  • Pd - Power Dissipation: 25 W
  • Series: STGF10NC60SD
  • Packaging: Tube
  • Brand: STMicroelectronics
  • Gate-Emitter Leakage Current: 100 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 50
  • Subcategory: IGBTs
  • Unit Weight: 0.081130 oz

STGF10NC60SD

STGF10NC60SD Specifications

STGF10NC60SD FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is STMicroelectronics.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is TO-220-3 FP.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is Through Hole.

  • A: What is the Collector- Emitter Voltage VCEO Max of the product?

    Q: The Collector- Emitter Voltage VCEO Max of the product is 600 V.

  • A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?

    Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 1.45 V

  • A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

    Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

    Q: Yes, the product's Continuous Collector Current at 25 C is indeed 10 A

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 25 W.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: At what frequency does the Gate-Emitter Leakage Current?

    Q: The product Gate-Emitter Leakage Current is 100 nA.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed IGBT Transistors

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 50.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is IGBTs.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.081130 oz.

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