STGW30H60DF

STGW30H60DF Overview

This product is manufactured by STMicroelectronics. TO-247 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 600 V. The 2.4 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 60 A 260 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.229281 oz of Unit Weight

STGW30H60DF Image

STGW30H60DF Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-247
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Collector-Emitter Saturation Voltage: 2.4 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 60 A
• Pd - Power Dissipation: 260 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 175 C
• Series: STGW30H60DF
• Packaging: Tube
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 0.229281 oz

STGW30H60DF FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is STMicroelectronics.

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed TO-247

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is Through Hole.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the Collector- Emitter Voltage VCEO Max of the product?

  Q: The Collector- Emitter Voltage VCEO Max of the product is 600 V.

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 2.4 V.

• A: At what frequency does the Maximum Gate Emitter Voltage?

  Q: The product Maximum Gate Emitter Voltage is 20 V.

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 60 A.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 260 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 175 C.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is IGBT Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 600.

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is IGBTs.

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.229281 oz.