STGWA30H65DFB

Mfr. #: STGWA30H65DFB
Hersteller: STMicroelectronics
Beschreibung: IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STGWA30H65DFB Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA30H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.55 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 60 A 260 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory

STGWA30H65DFB Image

STGWA30H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA30H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 1.55 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 60 A
  • Pd - Power Dissipation: 260 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA30H65DFB
  • Brand: STMicroelectronics
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs

STGWA30H65DFB

STGWA30H65DFB Specifications

STGWA30H65DFB FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-247-3.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Collector- Emitter Voltage VCEO Max of the product?

    Q: The Collector- Emitter Voltage VCEO Max of the product is 650 V.

  • A: At what frequency does the Collector-Emitter Saturation Voltage?

    Q: The product Collector-Emitter Saturation Voltage is 1.55 V.

  • A: At what frequency does the Maximum Gate Emitter Voltage?

    Q: The product Maximum Gate Emitter Voltage is 20 V.

  • A: What is the Continuous Collector Current at 25 C of the product?

    Q: The Continuous Collector Current at 25 C of the product is 60 A.

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 260 W.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 175 C.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed STMicroelectronics

  • A: What is the Gate-Emitter Leakage Current of the product?

    Q: The Gate-Emitter Leakage Current of the product is 250 nA.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed IGBT Transistors

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 600

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is IGBTs.

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ext. Preis
600
2,13 $
1 278,00 $
1200
1,80 $
2 160,00 $
3000
1,71 $
5 130,00 $
5400
1,64 $
8 856,00 $
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