STGWA40S120DF3

STGWA40S120DF3 Overview

This product is manufactured by STMicroelectronics. TO247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 1.2 kV. The 1.65 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 80 A 468 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 40 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.191185 oz of Unit Weight

STGWA40S120DF3 Image

STGWA40S120DF3 Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.2 kV
• Collector-Emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 80 A
• Pd - Power Dissipation: 468 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGWA40S120DF3
• Packaging: Tube
• Continuous Collector Current Ic Max: 40 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 0.191185 oz

STGWA40S120DF3 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed STMicroelectronics

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is TO247-3.

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed Through Hole

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the Collector- Emitter Voltage VCEO Max of the product?

  Q: The Collector- Emitter Voltage VCEO Max of the product is 1.2 kV.

• A: At what frequency does the Collector-Emitter Saturation Voltage?

  Q: The product Collector-Emitter Saturation Voltage is 1.65 V.

• A: At what frequency does the Maximum Gate Emitter Voltage?

  Q: The product Maximum Gate Emitter Voltage is 20 V.

• A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

  Q: Yes, the product's Continuous Collector Current at 25 C is indeed 80 A

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 468 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Continuous Collector Current Ic Max?

  Q: The product Continuous Collector Current Ic Max is 40 A.

• A: At what frequency does the Brand?

  Q: The product Brand is STMicroelectronics.

• A: At what frequency does the Gate-Emitter Leakage Current?

  Q: The product Gate-Emitter Leakage Current is 250 nA.

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 600

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is IGBTs.

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.191185 oz.