STGWA80H65DFB

Mfr. #: STGWA80H65DFB
Hersteller: STMicroelectronics
Beschreibung: IGBT Transistors IGBT & Power Bipolar
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STGWA80H65DFB Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA80H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 80 A The height of the product is 5.3 mm. 20.3 mm long STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGWA80H65DFB Image

STGWA80H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA80H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 2 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 120 A
  • Pd - Power Dissipation: 469 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA80H65DFB
  • Continuous Collector Current Ic Max: 80 A
  • Height: 5.3 mm
  • Length: 20.3 mm
  • Operating Temperature Range: - 55 C to + 175 C
  • Width: 15.9 mm
  • Brand: STMicroelectronics
  • Continuous Collector Current: 120 A
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs
  • Unit Weight: 1.340411 oz

STGWA80H65DFB

STGWA80H65DFB Specifications

STGWA80H65DFB FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is STMicroelectronics.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-247-3.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

    Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

  • A: At what frequency does the Collector-Emitter Saturation Voltage?

    Q: The product Collector-Emitter Saturation Voltage is 2 V.

  • A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

    Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

  • A: At what frequency does the Continuous Collector Current at 25 C?

    Q: The product Continuous Collector Current at 25 C is 120 A.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 469 W

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

  • A: Is the cutoff frequency of the product Continuous Collector Current Ic Max?

    Q: Yes, the product's Continuous Collector Current Ic Max is indeed 80 A

  • A: What is the Height of the product?

    Q: The Height of the product is 5.3 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 20.3 mm.

  • A: What is the Brand of the product?

    Q: The Brand of the product is STMicroelectronics.

  • A: At what frequency does the Gate-Emitter Leakage Current?

    Q: The product Gate-Emitter Leakage Current is 250 nA.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is IGBT Transistors.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 600

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed IGBTs

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 1.340411 oz

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