STGWT60H65DFB

STGWT60H65DFB Overview

This product is manufactured by STMicroelectronics. TO-3P package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.6 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 80 A 375 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 60 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 300 of 100 IGBTs as subcategory 1. 0.238311 oz of Unit Weight

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STGWT60H65DFB Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-3P
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 80 A
• Pd - Power Dissipation: 375 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGWT60H65DFB
• Packaging: Tube
• Continuous Collector Current Ic Max: 60 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 300
• Subcategory: IGBTs
• Unit Weight: 0.238311 oz

STGWT60H65DFB FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is STMicroelectronics.

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is TO-3P.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is Through Hole.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

• A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?

  Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 1.6 V

• A: What is the Maximum Gate Emitter Voltage of the product?

  Q: The Maximum Gate Emitter Voltage of the product is 20 V.

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 80 A.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 375 W.

• A: What is the Minimum Operating Temperature of the product?

  Q: The Minimum Operating Temperature of the product is - 55 C.

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 175 C.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Continuous Collector Current Ic Max?

  Q: Yes, the product's Continuous Collector Current Ic Max is indeed 60 A

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 300

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is IGBTs.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0.238311 oz.