STW21NM60N

Mfr. #: STW21NM60N
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STW21NM60N Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW21NM60N Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. TO-247-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 600 V 17 A continuous drain current Rds On value of 190 mOhms Gate-Source Voltage: 25 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 140 W This product has a Single configuration. The Channel Mode is set to Enhancement. Tube packaging for easy dispensing The height of the product is 20.15 mm. 15.75 mm long The Transistor Type is 1 N-Channel. This device belongs to the Power MOSFET type. STMicroelectronics is a trusted brand for quality electronics Minimum forward transconductance of 12 S 31 ns fall time MOSFET product type Rise Time is 15 ns. 30 of 100 MOSFETs as subcategory Turn-off delay time is 84 ns. The typical turn-on delay time is 22 ns. 1. 1.340411 oz of Unit Weight

STW21NM60N Image

STW21NM60N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW21NM60N Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-247-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 600 V
  • Id - Continuous Drain Current: 17 A
  • Rds On - Drain-Source Resistance: 190 mOhms
  • Vgs - Gate-Source Voltage: 25 V
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 140 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Packaging: Tube
  • Height: 20.15 mm
  • Length: 15.75 mm
  • Series: STW21NM60N
  • Transistor Type: 1 N-Channel
  • Type: Power MOSFET
  • Width: 5.15 mm
  • Brand: STMicroelectronics
  • Forward Transconductance - Min: 12 S
  • Fall Time: 31 ns
  • Product Type: MOSFET
  • Rise Time: 15 ns
  • Factory Pack Quantity: 30
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 84 ns
  • Typical Turn-On Delay Time: 22 ns
  • Unit Weight: 1.340411 oz

STW21NM60N

STW21NM60N Specifications

STW21NM60N FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is STMicroelectronics.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-247-3.

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 600 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 17 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 190 mOhms.

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 25 V

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 140 W

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Channel Mode?

    Q: The product Channel Mode is Enhancement.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Height?

    Q: The product Height is 20.15 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 15.75 mm.

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 1 N-Channel.

  • A: What is the Type of the product?

    Q: The Type of the product is Power MOSFET.

  • A: What is the Brand of the product?

    Q: The Brand of the product is STMicroelectronics.

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 12 S.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 31 ns

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 15 ns

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 30.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 84 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 22 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 1.340411 oz.

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