STW3N150

Mfr. #: STW3N150
Hersteller: STMicroelectronics
Beschreibung: MOSFET 1500V 6Ohm 2.5A N-Channel
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STW3N150 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW3N150 Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. TO-247-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 1.5 kV 2.5 A continuous drain current Rds On value of 9 Ohms Gate-Source Threshold Voltage Range: 3 V Gate-Source Voltage: 10 V The product can operate at a maximum temperature of + 150 C. 140 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's PowerMESH is Blue Gecko. Tube packaging for easy dispensing The height of the product is 20.15 mm. 15.75 mm long The Transistor Type is 1 N-Channel Power MOSFET. STMicroelectronics is a trusted brand for quality electronics Minimum forward transconductance of 2.6 S 61 ns fall time MOSFET product type Rise Time is 47 ns. 600 of 100 MOSFETs as subcategory Turn-off delay time is 45 ns. The typical turn-on delay time is 24 ns. 1. 1.340411 oz of Unit Weight

STW3N150 Image

STW3N150

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW3N150 Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-247-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 1.5 kV
  • Id - Continuous Drain Current: 2.5 A
  • Rds On - Drain-Source Resistance: 9 Ohms
  • Vgs th - Gate-Source Threshold Voltage: 3 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 29.3 nC
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 140 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: PowerMESH
  • Packaging: Tube
  • Height: 20.15 mm
  • Length: 15.75 mm
  • Series: STW3N150
  • Transistor Type: 1 N-Channel Power MOSFET
  • Width: 5.15 mm
  • Brand: STMicroelectronics
  • Forward Transconductance - Min: 2.6 S
  • Fall Time: 61 ns
  • Product Type: MOSFET
  • Rise Time: 47 ns
  • Factory Pack Quantity: 600
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 45 ns
  • Typical Turn-On Delay Time: 24 ns
  • Unit Weight: 1.340411 oz

STW3N150

STW3N150 Specifications

STW3N150 FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is STMicroelectronics.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed TO-247-3

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 1 Channel

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 1.5 kV.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 2.5 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 9 Ohms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 3 V.

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 10 V

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 140 W

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: At what frequency does the Tradename?

    Q: The product Tradename is PowerMESH.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 20.15 mm

  • A: What is the Length of the product?

    Q: The Length of the product is 15.75 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 N-Channel Power MOSFET

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: At what frequency does the Forward Transconductance - Min?

    Q: The product Forward Transconductance - Min is 2.6 S.

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 61 ns.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 47 ns

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 600

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 45 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 24 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 1.340411 oz.

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1
3,57 $
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100
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