TPS1120DG4

Mfr. #: TPS1120DG4
Hersteller: Texas Instruments
Beschreibung: MOSFET Dual P-Ch Enh-Mode MOSFET
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: TPS1120DG4 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
TPS1120DG4 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. SOIC-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 15 V 2.7 A continuous drain current Rds On value of 180 mOhms Gate-Source Voltage: 2 V, - 15 V The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 125 C. 840 mW This product has a Dual configuration. The Channel Mode is set to Enhancement. Tube packaging for easy dispensing The height of the product is 1.75 mm. 4.9 mm long MOSFET Small Signal The Transistor Type is 2 P-Channel. This device belongs to the Dual P-Channel Enhancement-Mode type. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 2.5 S 10 ns fall time MOSFET product type Rise Time is 10 ns. 75 of 100 MOSFETs as subcategory Turn-off delay time is 13 ns. The typical turn-on delay time is 4.5 ns. 1. 0.002677 oz of Unit Weight

TPS1120DG4 Image

TPS1120DG4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPS1120DG4 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: SOIC-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: P-Channel
  • Vds - Drain-Source Breakdown Voltage: 15 V
  • Id - Continuous Drain Current: 2.7 A
  • Rds On - Drain-Source Resistance: 180 mOhms
  • Vgs - Gate-Source Voltage: 2 V, - 15 V
  • Minimum Operating Temperature: - 40 C
  • Maximum Operating Temperature: + 125 C
  • Pd - Power Dissipation: 840 mW
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Packaging: Tube
  • Height: 1.75 mm
  • Length: 4.9 mm
  • Product: MOSFET Small Signal
  • Series: TPS1120
  • Transistor Type: 2 P-Channel
  • Type: Dual P-Channel Enhancement-Mode
  • Width: 3.9 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 2.5 S
  • Fall Time: 10 ns
  • Product Type: MOSFET
  • Rise Time: 10 ns
  • Factory Pack Quantity: 75
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 13 ns
  • Typical Turn-On Delay Time: 4.5 ns
  • Unit Weight: 0.002677 oz

TPS1120DG4

TPS1120DG4 Specifications

TPS1120DG4 FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed SOIC-8

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 15 V.

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 2.7 A

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 180 mOhms.

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 2 V, - 15 V

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 125 C

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 840 mW.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: At what frequency does the Channel Mode?

    Q: The product Channel Mode is Enhancement.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Height of the product?

    Q: The Height of the product is 1.75 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 4.9 mm.

  • A: At what frequency does the Product?

    Q: The product Product is MOSFET Small Signal.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 2 P-Channel.

  • A: At what frequency does the Type?

    Q: The product Type is Dual P-Channel Enhancement-Mode.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Forward Transconductance - Min?

    Q: Yes, the product's Forward Transconductance - Min is indeed 2.5 S

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 10 ns.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 10 ns

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 75.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 13 ns.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 4.5 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.002677 oz.

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