BD139

Mfr. #: BD139
Hersteller: STMicroelectronics
Beschreibung: TRANS NPN 80V 1.5A TO225AA
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: BD139 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BD139 Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Through Hole Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 1.5A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 40 @ 150mA, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 50mA, 500mA Power-off control: 12.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 80 V The transistor polarity is NPN. Saturation voltage between collector and emitter is - 0.5 V + 0.5 V The 80 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 1.5 A This product is capable of handling a 1.5 A continuous collector current. Minimum hfe for DC collector-base gain is 40. 250 of 605.

BD139 Image

BD139

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD139 Specifications
  • Manufacturer CJ
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-225AA, TO-126-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package SOT-32-3
  • Configuration Single
  • Power-Max 1.25W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 1.5A
  • Voltage-Collector-Emitter-Breakdown-Max 80V
  • DC-Current-Gain-hFE-Min-Ic-Vce 40 @ 150mA, 2V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 50mA, 500mA
  • Current-Collector-Cutoff-Max 100nA (ICBO)
  • Frequency-Transition -
  • Pd-Power-Dissipation 12.5 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 80 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage - 0.5 V + 0.5 V
  • Collector-Base-Voltage-VCBO 80 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 1.5 A
  • Continuous-Collector-Current 1.5 A
  • DC-Collector-Base-Gain-hfe-Min 40
  • DC-Current-Gain-hFE-Max 250

BD139

BD139 Specifications

BD139 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-225AA, TO-126-3.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-32-3

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 1.5A

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 80V

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 40 @ 150mA, 2V.

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 500mV @ 50mA, 500mA

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 12.5 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 80 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is - 0.5 V + 0.5 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 80 V

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 1.5 A.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 1.5 A.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 40.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 250.

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