BD237

Mfr. #: BD237
Hersteller: STMicroelectronics
Beschreibung: Bipolar Transistors - BJT NPN General Purpose
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: BD237 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BD237 Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product SMD/SMT Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 25 @ 1A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 600mV @ 100mA, 1A Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 80 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.6 V The 80 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Gain-Bandwidth-Product: 3 MHz This product is capable of handling a 2 A continuous collector current. Minimum hfe for DC collector-base gain is 40.

BD237 Image

BD237

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD237 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series 500V Transistors
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case TO-225AA, TO-126-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package SOT-32-3
  • Configuration Single
  • Power-Max 25W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 2A
  • Voltage-Collector-Emitter-Breakdown-Max 80V
  • DC-Current-Gain-hFE-Min-Ic-Vce 25 @ 1A, 2V
  • Vce-Saturation-Max-Ib-Ic 600mV @ 100mA, 1A
  • Current-Collector-Cutoff-Max 100μA (ICBO)
  • Frequency-Transition -
  • Pd-Power-Dissipation 25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 80 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.6 V
  • Collector-Base-Voltage-VCBO 80 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 2 A
  • Gain-Bandwidth-Product-fT 3 MHz
  • Continuous-Collector-Current 2 A
  • DC-Collector-Base-Gain-hfe-Min 40

BD237

BD237 Specifications

BD237 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-225AA, TO-126-3.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-32-3.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 2A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 80V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 25 @ 1A, 2V

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 600mV @ 100mA, 1A

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 25 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 80 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 0.6 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 80 V

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 2 A

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 3 MHz.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 2 A.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 40.

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