BD681

Mfr. #: BD681
Hersteller: STMicroelectronics
Beschreibung: Darlington Transistors NPN Power Darlington
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: BD681 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BD681 Overview

Product belongs to the Darlingtons series. Tube is the packaging method for this product Through Hole Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 750 @ 1.5A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 2.5V @ 30mA, 1.5A Power-off control: 40 W Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 4 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 750. 200 uA Maximum Collector Cut-off Current;

BD681 Image

BD681

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD681 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series Darlingtons
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-225AA, TO-126-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package SOT-32-3
  • Configuration Single
  • Power-Max 40W
  • Transistor-Type NPN - Darlington
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 100V
  • DC-Current-Gain-hFE-Min-Ic-Vce 750 @ 1.5A, 3V
  • Vce-Saturation-Max-Ib-Ic 2.5V @ 30mA, 1.5A
  • Current-Collector-Cutoff-Max 500μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 40 W
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 100 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 100 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 4 A
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 750
  • Maximum-Collector-Cut-off-Current 200 uA

BD681

BD681 Specifications

BD681 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed Darlingtons

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-225AA, TO-126-3.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-32-3.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN - Darlington.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 4A

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 100V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 750 @ 1.5A, 3V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 2.5V @ 30mA, 1.5A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 40 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 100 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 100 V.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 5 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 4 A.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 4 A

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 750.

  • A: At what frequency does the Maximum-Collector-Cut-off-Current?

    Q: The product Maximum-Collector-Cut-off-Current is 200 uA.

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